Investigation of photoelectrochemical deposition of Zn(S,O) via nitrate ion reduction in the presence of thiourea

  • S. Gallanti
  • , E. Chassaing
  • , M. Bouttemy
  • , E. Etcheberry
  • , D. Lincot
  • , N. Naghavi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, ZnO nanoporous layers have been deposited on Glass/Mo/Cu(In,Ga)Se2 substrate via nitrate ions reduction in presence of thiourea. The photoelectrochemical behavior of p-type semi-conductor Copper Indium Gallium Diselenide (CIGSe) has been studied in acidic medium for different pH values and different light intensities. Then, the effect of thiourea concentration between 0 and 1.0 M on the nitrate reduction in presence of zinc ion has been investigated by cyclic voltammetry in order to find the optimal potential for photoelectrodeposition. Results show that thiourea impacts the resulting photocurrent and the potential of the nitrates reduction. The photoelectrodeposited films have been characterized by Scanning Electron Microscopy, X-Ray Diffraction and X-Ray Photoelectron Spectroscopy. These analyses highlight that thiourea addition causes a change in film morphology, which is composed of well-crystallized ZnO with no sulfur incorporation. Moreover, thiourea seems to be an interesting additive to obtain nanoporous ZnO films on CIGSe.

Original languageEnglish
Title of host publicationProcesses at the Semiconductor Solution Interface 6
EditorsC. O'Dwyer, D. N. Buckley, A. Etcheberry, A. C. Hillier, R. P. Lynch, P. M. Vereecken, H. Wang, O. M. Leonte
PublisherElectrochemical Society Inc.
Pages151-162
Number of pages12
Edition6
ISBN (Electronic)9781607685968
DOIs
Publication statusPublished - 1 Jan 2015
EventSymposium on Processes at the Semiconductor Solution Interface 6 - 227th ECS Meeting - Chicago, United States
Duration: 24 May 201528 May 2015

Publication series

NameECS Transactions
Number6
Volume66
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Processes at the Semiconductor Solution Interface 6 - 227th ECS Meeting
Country/TerritoryUnited States
CityChicago
Period24/05/1528/05/15

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