Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires

A. Messanvi; H. Zhang; V. Neplokh; F. H. Julien; F. Bayle; M. Foldyna; C. Bougerol; E. Gautier; A. Babichev; C. Durand; J. Eymery; M. Tchernycheva

doi:10.1021/acsami.5b06473

Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires

A. Messanvi
, H. Zhang
, V. Neplokh
, F. H. Julien
, F. Bayle
, M. Foldyna
, C. Bougerol
, E. Gautier
, A. Babichev
, C. Durand
, J. Eymery
, M. Tchernycheva

Research output: Contribution to journal › Article › peer-review

Abstract

We report the investigation of the photovoltaic properties of core-shell GaN/InGaN wires. The radial structure is grown on m-plane {11¯00} facets of self-assembled c¯-axis GaN wires elaborated by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates. The conversion efficiency of wires with radial shell composed of thick In_0.1Ga_0.9N layers and of 30× In_0.18Ga_0.82N/GaN quantum wells are compared. We also investigate the impact of the contact nature and layout on the carrier collection and photovoltaic performances. The contact optimization results in an improved conversion efficiency of 0.33% and a fill factor of 83% under 1 sun (AM1.5G) on single wires with a quantum well-based active region. Photocurrent spectroscopy demonstrates that the response ascribed to the absorption of InGaN/GaN quantum wells appears at wavelengths shorter than 440 nm.

Original language	English
Pages (from-to)	21898-21906
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	7
Issue number	39
DOIs	https://doi.org/10.1021/acsami.5b06473
Publication status	Published - 7 Oct 2015

Keywords

EBIC
InGaN/GaN MQWs
MOVPE
photocurrent spectroscopy
photovoltaics
wires

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1021/acsami.5b06473

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@article{a684c0d78b764923b76528dd3d9d054d,

title = "Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires",

abstract = "We report the investigation of the photovoltaic properties of core-shell GaN/InGaN wires. The radial structure is grown on m-plane \{11¯00\} facets of self-assembled c¯-axis GaN wires elaborated by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates. The conversion efficiency of wires with radial shell composed of thick In0.1Ga0.9N layers and of 30× In0.18Ga0.82N/GaN quantum wells are compared. We also investigate the impact of the contact nature and layout on the carrier collection and photovoltaic performances. The contact optimization results in an improved conversion efficiency of 0.33\% and a fill factor of 83\% under 1 sun (AM1.5G) on single wires with a quantum well-based active region. Photocurrent spectroscopy demonstrates that the response ascribed to the absorption of InGaN/GaN quantum wells appears at wavelengths shorter than 440 nm.",

keywords = "EBIC, InGaN/GaN MQWs, MOVPE, photocurrent spectroscopy, photovoltaics, wires",

author = "A. Messanvi and H. Zhang and V. Neplokh and Julien, \{F. H.\} and F. Bayle and M. Foldyna and C. Bougerol and E. Gautier and A. Babichev and C. Durand and J. Eymery and M. Tchernycheva",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

month = oct,

day = "7",

doi = "10.1021/acsami.5b06473",

language = "English",

volume = "7",

pages = "21898--21906",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

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TY - JOUR

T1 - Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires

AU - Messanvi, A.

AU - Zhang, H.

AU - Neplokh, V.

AU - Julien, F. H.

AU - Bayle, F.

AU - Foldyna, M.

AU - Bougerol, C.

AU - Gautier, E.

AU - Babichev, A.

AU - Durand, C.

AU - Eymery, J.

AU - Tchernycheva, M.

PY - 2015/10/7

Y1 - 2015/10/7

N2 - We report the investigation of the photovoltaic properties of core-shell GaN/InGaN wires. The radial structure is grown on m-plane {11¯00} facets of self-assembled c¯-axis GaN wires elaborated by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates. The conversion efficiency of wires with radial shell composed of thick In0.1Ga0.9N layers and of 30× In0.18Ga0.82N/GaN quantum wells are compared. We also investigate the impact of the contact nature and layout on the carrier collection and photovoltaic performances. The contact optimization results in an improved conversion efficiency of 0.33% and a fill factor of 83% under 1 sun (AM1.5G) on single wires with a quantum well-based active region. Photocurrent spectroscopy demonstrates that the response ascribed to the absorption of InGaN/GaN quantum wells appears at wavelengths shorter than 440 nm.

AB - We report the investigation of the photovoltaic properties of core-shell GaN/InGaN wires. The radial structure is grown on m-plane {11¯00} facets of self-assembled c¯-axis GaN wires elaborated by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates. The conversion efficiency of wires with radial shell composed of thick In0.1Ga0.9N layers and of 30× In0.18Ga0.82N/GaN quantum wells are compared. We also investigate the impact of the contact nature and layout on the carrier collection and photovoltaic performances. The contact optimization results in an improved conversion efficiency of 0.33% and a fill factor of 83% under 1 sun (AM1.5G) on single wires with a quantum well-based active region. Photocurrent spectroscopy demonstrates that the response ascribed to the absorption of InGaN/GaN quantum wells appears at wavelengths shorter than 440 nm.

KW - EBIC

KW - InGaN/GaN MQWs

KW - MOVPE

KW - photocurrent spectroscopy

KW - photovoltaics

KW - wires

U2 - 10.1021/acsami.5b06473

DO - 10.1021/acsami.5b06473

M3 - Article

AN - SCOPUS:84944096969

SN - 1944-8244

VL - 7

SP - 21898

EP - 21906

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 39

ER -

Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires

Abstract

Keywords

UN SDGs

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