TY - GEN
T1 - Investigation of the nanodiagnostics probe modes for semiconductor resistivity measurements by atomic force microscopy
AU - Ageev, Oleg A.
AU - Alyabieva, Natalie I.
AU - Konoplev, Boris G.
AU - Smirnov, Vladimir A.
AU - Tkachuk, Vladislav V.
PY - 2014/3/19
Y1 - 2014/3/19
N2 - The work presents the results of theoretical and experimental investigations of the features and nanodiagnostics probe modes for semiconductors resistivity measurements by current technique of atomic force microscopy and by using test silicon samples with known resistivities (0.01 Ω·cm, 1 Ω·cm, 5 Ω·cm, 10 Ω·cm). It is shown that the measured resistivity data in air and in ultrahigh vacuum (10-8 Pa) is 166 Ω·cm and 10 Ω·cm, respectively, for the sample with ρ = 10 Ω·cm of theoretically predicted resistivity. We showed that reducing of the measurements reliability in air, due to the local anodic oxidation of the substrate surface. Experimental studies of the influence of cantilever load forces (0.3 to 6.0 μN) to the samples surface on the current distribution are presented. Based on the experimental results we developed a mathematical model for determining the resistivity of semiconductor materials by current technique of atomic force microscopy. The results are useful to the development of probe methods for nanoelectronic devices analysis by atomic force microscopy.
AB - The work presents the results of theoretical and experimental investigations of the features and nanodiagnostics probe modes for semiconductors resistivity measurements by current technique of atomic force microscopy and by using test silicon samples with known resistivities (0.01 Ω·cm, 1 Ω·cm, 5 Ω·cm, 10 Ω·cm). It is shown that the measured resistivity data in air and in ultrahigh vacuum (10-8 Pa) is 166 Ω·cm and 10 Ω·cm, respectively, for the sample with ρ = 10 Ω·cm of theoretically predicted resistivity. We showed that reducing of the measurements reliability in air, due to the local anodic oxidation of the substrate surface. Experimental studies of the influence of cantilever load forces (0.3 to 6.0 μN) to the samples surface on the current distribution are presented. Based on the experimental results we developed a mathematical model for determining the resistivity of semiconductor materials by current technique of atomic force microscopy. The results are useful to the development of probe methods for nanoelectronic devices analysis by atomic force microscopy.
KW - Atomic force microscopy
KW - Current distribution
KW - Nanotechnology
KW - Probe nanodiagnostics
KW - Ultra-high vacuum
UR - https://www.scopus.com/pages/publications/84903363769
U2 - 10.4028/www.scientific.net/AMR.894.374
DO - 10.4028/www.scientific.net/AMR.894.374
M3 - Conference contribution
AN - SCOPUS:84903363769
SN - 9783038350323
T3 - Advanced Materials Research
SP - 374
EP - 378
BT - Advanced Materials Research IV
T2 - 2014 4th International Conference on Advanced Materials Research, ICAMR 2014
Y2 - 22 January 2014 through 23 January 2014
ER -