Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties

B. Kalache; A. I. Kosarev; R. Vanderhaghen; Roca P. Cabarrocas

doi:10.1063/1.1524707

Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties

B. Kalache
, A. I. Kosarev
, R. Vanderhaghen
, Roca P. Cabarrocas

Institut polytechnique de Paris

Research output: Contribution to journal › Article › peer-review

Abstract

The structural properties of thick and thin films were studied to investigate the role of ions on the growth of microcrystalline silicon films produced by the standard hydrogen dilution of silane in a radio frequency glow discharge. The ion energy was tuned by codepositing series of samples on the grounded electrode and on the powered electrode. Fully crystallized films were achieved on glass substrates under conditions of high energy ion bombardment.

Original language	English
Pages (from-to)	1262-1273
Number of pages	12
Journal	Journal of Applied Physics
Volume	93
Issue number	2
DOIs	https://doi.org/10.1063/1.1524707
Publication status	Published - 15 Jan 2003

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title = "Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties",

abstract = "The structural properties of thick and thin films were studied to investigate the role of ions on the growth of microcrystalline silicon films produced by the standard hydrogen dilution of silane in a radio frequency glow discharge. The ion energy was tuned by codepositing series of samples on the grounded electrode and on the powered electrode. Fully crystallized films were achieved on glass substrates under conditions of high energy ion bombardment.",

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AU - Kosarev, A. I.

AU - Vanderhaghen, R.

AU - Cabarrocas, Roca P.

PY - 2003/1/15

Y1 - 2003/1/15

N2 - The structural properties of thick and thin films were studied to investigate the role of ions on the growth of microcrystalline silicon films produced by the standard hydrogen dilution of silane in a radio frequency glow discharge. The ion energy was tuned by codepositing series of samples on the grounded electrode and on the powered electrode. Fully crystallized films were achieved on glass substrates under conditions of high energy ion bombardment.

AB - The structural properties of thick and thin films were studied to investigate the role of ions on the growth of microcrystalline silicon films produced by the standard hydrogen dilution of silane in a radio frequency glow discharge. The ion energy was tuned by codepositing series of samples on the grounded electrode and on the powered electrode. Fully crystallized films were achieved on glass substrates under conditions of high energy ion bombardment.

UR - https://www.scopus.com/pages/publications/0037439882

U2 - 10.1063/1.1524707

DO - 10.1063/1.1524707

M3 - Article

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties

Abstract

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