Ion energy threshold in low-temperature silicon epitaxy for thin-film crystalline photovoltaics

Bastien Bruneau; Romain Cariou; Jean Christophe Dornstetter; Michael Lepecq; Jean Luc Maurice; Pere Roca I Cabarrocas; Erik V. Johnson

doi:10.1109/JPHOTOV.2014.2357256

Ion energy threshold in low-temperature silicon epitaxy for thin-film crystalline photovoltaics

Bastien Bruneau
, Romain Cariou
, Jean Christophe Dornstetter
, Michael Lepecq
, Jean Luc Maurice
, Pere Roca I Cabarrocas
, Erik V. Johnson

Research output: Contribution to journal › Article › peer-review

Abstract

Plasma-enhanced chemical vapor deposition (PECVD) enables epitaxial silicon deposition for up to several micrometers and at low temperatures (as low as 150 °C). We present herein a detailed study of the effect of ion energy at high (above 2 torr) and low (below 1 torr) pressure, where the plasma and surface reactions are expected to be different, i.e., driven, respectively, by high-order and low-order silane precursors. We find a sharp energy threshold at low pressure, above which no epitaxy can be obtained, but this threshold is relaxed at high pressure. The occurrence of epitaxy breakdown is studied and compared in detail for these two different pressure regimes.

Original language	English
Article number	6912925
Pages (from-to)	1361-1367
Number of pages	7
Journal	IEEE Journal of Photovoltaics
Volume	4
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2014.2357256
Publication status	Published - 1 Jan 2014

Keywords

Epitaxy
ion energy
low temperature
plasmaenhanced chemical vapor deposition (PECVD)
silicon
solar cells
tailored voltage waveform

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10.1109/JPHOTOV.2014.2357256

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title = "Ion energy threshold in low-temperature silicon epitaxy for thin-film crystalline photovoltaics",

abstract = "Plasma-enhanced chemical vapor deposition (PECVD) enables epitaxial silicon deposition for up to several micrometers and at low temperatures (as low as 150 °C). We present herein a detailed study of the effect of ion energy at high (above 2 torr) and low (below 1 torr) pressure, where the plasma and surface reactions are expected to be different, i.e., driven, respectively, by high-order and low-order silane precursors. We find a sharp energy threshold at low pressure, above which no epitaxy can be obtained, but this threshold is relaxed at high pressure. The occurrence of epitaxy breakdown is studied and compared in detail for these two different pressure regimes.",

keywords = "Epitaxy, ion energy, low temperature, plasmaenhanced chemical vapor deposition (PECVD), silicon, solar cells, tailored voltage waveform",

author = "Bastien Bruneau and Romain Cariou and Dornstetter, \{Jean Christophe\} and Michael Lepecq and Maurice, \{Jean Luc\} and \{Roca I Cabarrocas\}, Pere and \{V. Johnson\}, Erik",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.",

year = "2014",

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doi = "10.1109/JPHOTOV.2014.2357256",

language = "English",

volume = "4",

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TY - JOUR

T1 - Ion energy threshold in low-temperature silicon epitaxy for thin-film crystalline photovoltaics

AU - Bruneau, Bastien

AU - Cariou, Romain

AU - Dornstetter, Jean Christophe

AU - Lepecq, Michael

AU - Maurice, Jean Luc

AU - Roca I Cabarrocas, Pere

AU - V. Johnson, Erik

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Plasma-enhanced chemical vapor deposition (PECVD) enables epitaxial silicon deposition for up to several micrometers and at low temperatures (as low as 150 °C). We present herein a detailed study of the effect of ion energy at high (above 2 torr) and low (below 1 torr) pressure, where the plasma and surface reactions are expected to be different, i.e., driven, respectively, by high-order and low-order silane precursors. We find a sharp energy threshold at low pressure, above which no epitaxy can be obtained, but this threshold is relaxed at high pressure. The occurrence of epitaxy breakdown is studied and compared in detail for these two different pressure regimes.

AB - Plasma-enhanced chemical vapor deposition (PECVD) enables epitaxial silicon deposition for up to several micrometers and at low temperatures (as low as 150 °C). We present herein a detailed study of the effect of ion energy at high (above 2 torr) and low (below 1 torr) pressure, where the plasma and surface reactions are expected to be different, i.e., driven, respectively, by high-order and low-order silane precursors. We find a sharp energy threshold at low pressure, above which no epitaxy can be obtained, but this threshold is relaxed at high pressure. The occurrence of epitaxy breakdown is studied and compared in detail for these two different pressure regimes.

KW - Epitaxy

KW - ion energy

KW - low temperature

KW - plasmaenhanced chemical vapor deposition (PECVD)

KW - silicon

KW - solar cells

KW - tailored voltage waveform

U2 - 10.1109/JPHOTOV.2014.2357256

DO - 10.1109/JPHOTOV.2014.2357256

M3 - Article

AN - SCOPUS:84908224218

SN - 2156-3381

VL - 4

SP - 1361

EP - 1367

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 6

M1 - 6912925

ER -

Ion energy threshold in low-temperature silicon epitaxy for thin-film crystalline photovoltaics

Abstract

Keywords

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