Kinetics of both defects and electron and hole diffusion lengths during light-soaking in a-Si:H films

A. S. Abramov; A. I. Kosarev; P. Roca i Cabarrocas; A. J. Vinogradov

doi:10.1557/proc-420-659

Kinetics of both defects and electron and hole diffusion lengths during light-soaking in a-Si:H films

A. S. Abramov
, A. I. Kosarev
, P. Roca i Cabarrocas
, A. J. Vinogradov

Ioffe Institute

Research output: Contribution to journal › Conference article › peer-review

Abstract

Concomitant studies of kinetics of defects N_D(t), photoconductivity δ_ph(t), electron and hole diffusion lengths L_e(t), L_h(t) during light soaking have been carried out. The data have been fitted by stretched exponential expressions and characteristic parameters of kinetics have been determined. Correlation between the kinetics is discussed. In contrast to N_d(t), σ_ph(t) and L_e(t), the hole diffusion length L_h(t) was observed to remain constant during initial time (approx.10³s) and then decreased with characteristic time approx. 10⁴s.

Original language	English
Pages (from-to)	659-664
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	420
DOIs	https://doi.org/10.1557/proc-420-659
Publication status	Published - 1 Jan 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 8 Apr 1996 → 12 Apr 1996

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title = "Kinetics of both defects and electron and hole diffusion lengths during light-soaking in a-Si:H films",

abstract = "Concomitant studies of kinetics of defects ND(t), photoconductivity δph(t), electron and hole diffusion lengths Le(t), Lh(t) during light soaking have been carried out. The data have been fitted by stretched exponential expressions and characteristic parameters of kinetics have been determined. Correlation between the kinetics is discussed. In contrast to Nd(t), σph(t) and Le(t), the hole diffusion length Lh(t) was observed to remain constant during initial time (approx.103s) and then decreased with characteristic time approx. 104s.",

author = "Abramov, \{A. S.\} and Kosarev, \{A. I.\} and \{Roca i Cabarrocas\}, P. and Vinogradov, \{A. J.\}",

year = "1996",

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doi = "10.1557/proc-420-659",

language = "English",

volume = "420",

pages = "659--664",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

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TY - JOUR

T1 - Kinetics of both defects and electron and hole diffusion lengths during light-soaking in a-Si:H films

AU - Abramov, A. S.

AU - Kosarev, A. I.

AU - Roca i Cabarrocas, P.

AU - Vinogradov, A. J.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Concomitant studies of kinetics of defects ND(t), photoconductivity δph(t), electron and hole diffusion lengths Le(t), Lh(t) during light soaking have been carried out. The data have been fitted by stretched exponential expressions and characteristic parameters of kinetics have been determined. Correlation between the kinetics is discussed. In contrast to Nd(t), σph(t) and Le(t), the hole diffusion length Lh(t) was observed to remain constant during initial time (approx.103s) and then decreased with characteristic time approx. 104s.

AB - Concomitant studies of kinetics of defects ND(t), photoconductivity δph(t), electron and hole diffusion lengths Le(t), Lh(t) during light soaking have been carried out. The data have been fitted by stretched exponential expressions and characteristic parameters of kinetics have been determined. Correlation between the kinetics is discussed. In contrast to Nd(t), σph(t) and Le(t), the hole diffusion length Lh(t) was observed to remain constant during initial time (approx.103s) and then decreased with characteristic time approx. 104s.

UR - https://www.scopus.com/pages/publications/0030379508

U2 - 10.1557/proc-420-659

DO - 10.1557/proc-420-659

M3 - Conference article

AN - SCOPUS:0030379508

SN - 0272-9172

VL - 420

SP - 659

EP - 664

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Kinetics of both defects and electron and hole diffusion lengths during light-soaking in a-Si:H films

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