Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack

E. Martinez; P. Ronsheim; J. P. Barnes; N. Rochat; M. Py; M. Hatzistergos; O. Renault; M. Silly; F. Sirotti; F. Bertin; N. Gambacorti

doi:10.1016/j.mee.2011.03.061

Lanthanum diffusion in the TiN/LaO_x/HfSiO/SiO₂/Si stack

E. Martinez
, P. Ronsheim
, J. P. Barnes
, N. Rochat
, M. Py
, M. Hatzistergos
, O. Renault
, M. Silly
, F. Sirotti
, F. Bertin
, N. Gambacorti

Research output: Contribution to journal › Article › peer-review

Abstract

Band edge Complementary Metal Oxide Semiconductor (CMOS) devices are obtained by insertion of a thin LaO_x layer between the high-k (HfSiO) and metal gate (TiN). High temperature post deposition anneal induces Lanthanum diffusion across the HfSiO towards the SiO₂ interfacial layer, as shown by Time of Flight Secondary Ions Mass Spectroscopy (ToF-SIMS) and Atom Probe Tomography (APT). Fourier Transform Infrared Spectroscopy in Attenuated Total Reflexion mode (ATR-FTIR) shows the formation of La-O-Si bonds at the high-k/SiO₂ interface. Soft X-ray Photoelectron Spectroscopy (S-XPS) is performed after partial removal of the TiN gate. Results confirm La diffusion and changes in the La chemical environment.

Original language	English
Pages (from-to)	1349-1352
Number of pages	4
Journal	Microelectronic Engineering
Volume	88
Issue number	7
DOIs	https://doi.org/10.1016/j.mee.2011.03.061
Publication status	Published - 1 Jul 2011
Externally published	Yes

Keywords

APT
ATR-FTIR
HfSiO
Interfacial dipole
La
Metal/high-k stack
S-XPS
Threshold voltage tuning
TiN
ToF-SIMS

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10.1016/j.mee.2011.03.061

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title = "Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack",

abstract = "Band edge Complementary Metal Oxide Semiconductor (CMOS) devices are obtained by insertion of a thin LaOx layer between the high-k (HfSiO) and metal gate (TiN). High temperature post deposition anneal induces Lanthanum diffusion across the HfSiO towards the SiO2 interfacial layer, as shown by Time of Flight Secondary Ions Mass Spectroscopy (ToF-SIMS) and Atom Probe Tomography (APT). Fourier Transform Infrared Spectroscopy in Attenuated Total Reflexion mode (ATR-FTIR) shows the formation of La-O-Si bonds at the high-k/SiO2 interface. Soft X-ray Photoelectron Spectroscopy (S-XPS) is performed after partial removal of the TiN gate. Results confirm La diffusion and changes in the La chemical environment.",

keywords = "APT, ATR-FTIR, HfSiO, Interfacial dipole, La, Metal/high-k stack, S-XPS, Threshold voltage tuning, TiN, ToF-SIMS",

author = "E. Martinez and P. Ronsheim and Barnes, \{J. P.\} and N. Rochat and M. Py and M. Hatzistergos and O. Renault and M. Silly and F. Sirotti and F. Bertin and N. Gambacorti",

year = "2011",

month = jul,

day = "1",

doi = "10.1016/j.mee.2011.03.061",

language = "English",

volume = "88",

pages = "1349--1352",

journal = "Microelectronic Engineering",

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T1 - Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack

AU - Martinez, E.

AU - Ronsheim, P.

AU - Barnes, J. P.

AU - Rochat, N.

AU - Py, M.

AU - Hatzistergos, M.

AU - Renault, O.

AU - Silly, M.

AU - Sirotti, F.

AU - Bertin, F.

AU - Gambacorti, N.

PY - 2011/7/1

Y1 - 2011/7/1

N2 - Band edge Complementary Metal Oxide Semiconductor (CMOS) devices are obtained by insertion of a thin LaOx layer between the high-k (HfSiO) and metal gate (TiN). High temperature post deposition anneal induces Lanthanum diffusion across the HfSiO towards the SiO2 interfacial layer, as shown by Time of Flight Secondary Ions Mass Spectroscopy (ToF-SIMS) and Atom Probe Tomography (APT). Fourier Transform Infrared Spectroscopy in Attenuated Total Reflexion mode (ATR-FTIR) shows the formation of La-O-Si bonds at the high-k/SiO2 interface. Soft X-ray Photoelectron Spectroscopy (S-XPS) is performed after partial removal of the TiN gate. Results confirm La diffusion and changes in the La chemical environment.

AB - Band edge Complementary Metal Oxide Semiconductor (CMOS) devices are obtained by insertion of a thin LaOx layer between the high-k (HfSiO) and metal gate (TiN). High temperature post deposition anneal induces Lanthanum diffusion across the HfSiO towards the SiO2 interfacial layer, as shown by Time of Flight Secondary Ions Mass Spectroscopy (ToF-SIMS) and Atom Probe Tomography (APT). Fourier Transform Infrared Spectroscopy in Attenuated Total Reflexion mode (ATR-FTIR) shows the formation of La-O-Si bonds at the high-k/SiO2 interface. Soft X-ray Photoelectron Spectroscopy (S-XPS) is performed after partial removal of the TiN gate. Results confirm La diffusion and changes in the La chemical environment.

KW - APT

KW - ATR-FTIR

KW - HfSiO

KW - Interfacial dipole

KW - La

KW - Metal/high-k stack

KW - S-XPS

KW - Threshold voltage tuning

KW - TiN

KW - ToF-SIMS

UR - https://www.scopus.com/pages/publications/79958026712

U2 - 10.1016/j.mee.2011.03.061

DO - 10.1016/j.mee.2011.03.061

M3 - Article

AN - SCOPUS:79958026712

SN - 0167-9317

VL - 88

SP - 1349

EP - 1352

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7

ER -

Lanthanum diffusion in the TiN/LaO_x/HfSiO/SiO₂/Si stack

Abstract

Keywords

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