Large-area Cd-free CIGS solar modules with In2S3 buffer layer deposited by ALCVD

S. Spiering; A. Eicke; D. Hariskos; M. Powalla; N. Naghavi; D. Lincot

doi:10.1016/j.tsf.2003.10.090

Large-area Cd-free CIGS solar modules with In₂S₃ buffer layer deposited by ALCVD

S. Spiering
, A. Eicke
, D. Hariskos
, M. Powalla
, N. Naghavi
, D. Lincot

Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg
Ctr. Natl. de Recherche Scientifique
Centre national de la recherche scientifique

Research output: Contribution to journal › Conference article › peer-review

110 Citations (Scopus)

Abstract

The development of Cd-free buffer layers by vacuum process for Cu(In,Ga)Se₂ (CIGS) solar modules becomes even more interesting regarding environmental aspects and the implementation in industrial production. This work presents the latest results of CIGS modules with indium sulfide (In₂S₃) as buffer layer deposited by the atomic layer chemical vapour deposition technique. A module efficiency close to 13% was realised on the area of 30×30 cm² (η = 12.9%, V _OC = 27.8 V, FF = 72.6%, I_SC = 0.457 A, aperture area: 714 cm² and 42 cells). Diffusion processes at the buffer layer interfaces, dependent on deposition temperature and post annealing, have been investigated by X-ray photoelectron spectroscopy, secondary ion mass spectrometry and sputtered neutral mass spectrometry analysis. Diffusion of Cu and Na into the buffer layer and intermixing of S and Se at the In ₂S₃/CIGS interface have been detected.

Original language	English
Pages (from-to)	562-566
Number of pages	5
Journal	Thin Solid Films
Volume	451-452
DOIs	https://doi.org/10.1016/j.tsf.2003.10.090
Publication status	Published - 22 Mar 2004
Event	Proceedings of Symposium D on Thin Film and Nano-Structured - Strasbourg, France Duration: 10 Jun 2003 → 13 Jun 2003

Keywords

Atomic layer deposition
Buffer layer
Cd-free
Cu(In,Ga)Se
InS

Access to Document

10.1016/j.tsf.2003.10.090

Cite this

@article{b6e0a33161824c32927047186417c931,

title = "Large-area Cd-free CIGS solar modules with In2S3 buffer layer deposited by ALCVD",

abstract = "The development of Cd-free buffer layers by vacuum process for Cu(In,Ga)Se2 (CIGS) solar modules becomes even more interesting regarding environmental aspects and the implementation in industrial production. This work presents the latest results of CIGS modules with indium sulfide (In2S3) as buffer layer deposited by the atomic layer chemical vapour deposition technique. A module efficiency close to 13\% was realised on the area of 30{\texttimes}30 cm2 (η = 12.9\%, V OC = 27.8 V, FF = 72.6\%, ISC = 0.457 A, aperture area: 714 cm2 and 42 cells). Diffusion processes at the buffer layer interfaces, dependent on deposition temperature and post annealing, have been investigated by X-ray photoelectron spectroscopy, secondary ion mass spectrometry and sputtered neutral mass spectrometry analysis. Diffusion of Cu and Na into the buffer layer and intermixing of S and Se at the In 2S3/CIGS interface have been detected.",

keywords = "Atomic layer deposition, Buffer layer, Cd-free, Cu(In,Ga)Se, InS",

author = "S. Spiering and A. Eicke and D. Hariskos and M. Powalla and N. Naghavi and D. Lincot",

year = "2004",

month = mar,

day = "22",

doi = "10.1016/j.tsf.2003.10.090",

language = "English",

volume = "451-452",

pages = "562--566",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

note = "Proceedings of Symposium D on Thin Film and Nano-Structured ; Conference date: 10-06-2003 Through 13-06-2003",

}

TY - JOUR

T1 - Large-area Cd-free CIGS solar modules with In2S3 buffer layer deposited by ALCVD

AU - Spiering, S.

AU - Eicke, A.

AU - Hariskos, D.

AU - Powalla, M.

AU - Naghavi, N.

AU - Lincot, D.

PY - 2004/3/22

Y1 - 2004/3/22

N2 - The development of Cd-free buffer layers by vacuum process for Cu(In,Ga)Se2 (CIGS) solar modules becomes even more interesting regarding environmental aspects and the implementation in industrial production. This work presents the latest results of CIGS modules with indium sulfide (In2S3) as buffer layer deposited by the atomic layer chemical vapour deposition technique. A module efficiency close to 13% was realised on the area of 30×30 cm2 (η = 12.9%, V OC = 27.8 V, FF = 72.6%, ISC = 0.457 A, aperture area: 714 cm2 and 42 cells). Diffusion processes at the buffer layer interfaces, dependent on deposition temperature and post annealing, have been investigated by X-ray photoelectron spectroscopy, secondary ion mass spectrometry and sputtered neutral mass spectrometry analysis. Diffusion of Cu and Na into the buffer layer and intermixing of S and Se at the In 2S3/CIGS interface have been detected.

AB - The development of Cd-free buffer layers by vacuum process for Cu(In,Ga)Se2 (CIGS) solar modules becomes even more interesting regarding environmental aspects and the implementation in industrial production. This work presents the latest results of CIGS modules with indium sulfide (In2S3) as buffer layer deposited by the atomic layer chemical vapour deposition technique. A module efficiency close to 13% was realised on the area of 30×30 cm2 (η = 12.9%, V OC = 27.8 V, FF = 72.6%, ISC = 0.457 A, aperture area: 714 cm2 and 42 cells). Diffusion processes at the buffer layer interfaces, dependent on deposition temperature and post annealing, have been investigated by X-ray photoelectron spectroscopy, secondary ion mass spectrometry and sputtered neutral mass spectrometry analysis. Diffusion of Cu and Na into the buffer layer and intermixing of S and Se at the In 2S3/CIGS interface have been detected.

KW - Atomic layer deposition

KW - Buffer layer

KW - Cd-free

KW - Cu(In,Ga)Se

KW - InS

U2 - 10.1016/j.tsf.2003.10.090

DO - 10.1016/j.tsf.2003.10.090

M3 - Conference article

AN - SCOPUS:17644432719

SN - 0040-6090

VL - 451-452

SP - 562

EP - 566

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of Symposium D on Thin Film and Nano-Structured

Y2 - 10 June 2003 through 13 June 2003