Large grain μc-Si:H films deposited at low temperature: Growth process and electronic properties

A. Abramov; Y. Djeridane; R. Vanderhaghen; P. Roca i Cabarrocas

doi:10.1016/j.jnoncrysol.2005.10.060

Large grain μc-Si:H films deposited at low temperature: Growth process and electronic properties

A. Abramov
, Y. Djeridane
, R. Vanderhaghen
, P. Roca i Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied structural and electronic properties of μc-Si:H films deposited from SiH₄ + H₂ and SiH₄ + H₂ + Ar gas mixtures. The use of Ar containing gas mixtures for depositions allows us to increase deposition rate by a factor of two and to obtain films with an important fraction of large grains in comparison with SiH₄ + H₂ gas mixtures. Electronic properties of fully crystallized films become more intrinsic with the increase of large grain fraction. Deposition of highly p- and n-doped μc-Si:H layers from the dopant/SiH₄ + H₂ gas mixture at a temperature of 175 °C is possible without any remarkable changes in crystallinity in comparison with undoped films deposited with the same discharge conditions.

Original language	English
Pages (from-to)	964-967
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	352
Issue number	9-20 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jnoncrysol.2005.10.060
Publication status	Published - 15 Jun 2006

Keywords

Chemical vapor deposition
Conductivity
Ellipsometry
Microcrystallinity
Nanoparticles
Raman spectroscopy
Solar cells
Thin film transistors

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10.1016/j.jnoncrysol.2005.10.060

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title = "Large grain μc-Si:H films deposited at low temperature: Growth process and electronic properties",

abstract = "We have studied structural and electronic properties of μc-Si:H films deposited from SiH4 + H2 and SiH4 + H2 + Ar gas mixtures. The use of Ar containing gas mixtures for depositions allows us to increase deposition rate by a factor of two and to obtain films with an important fraction of large grains in comparison with SiH4 + H2 gas mixtures. Electronic properties of fully crystallized films become more intrinsic with the increase of large grain fraction. Deposition of highly p- and n-doped μc-Si:H layers from the dopant/SiH4 + H2 gas mixture at a temperature of 175 °C is possible without any remarkable changes in crystallinity in comparison with undoped films deposited with the same discharge conditions.",

keywords = "Chemical vapor deposition, Conductivity, Ellipsometry, Microcrystallinity, Nanoparticles, Raman spectroscopy, Solar cells, Thin film transistors",

author = "A. Abramov and Y. Djeridane and R. Vanderhaghen and \{Roca i Cabarrocas\}, P.",

year = "2006",

month = jun,

day = "15",

doi = "10.1016/j.jnoncrysol.2005.10.060",

language = "English",

volume = "352",

pages = "964--967",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

number = "9-20 SPEC. ISS.",

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TY - JOUR

T1 - Large grain μc-Si:H films deposited at low temperature

T2 - Growth process and electronic properties

AU - Abramov, A.

AU - Djeridane, Y.

AU - Vanderhaghen, R.

AU - Roca i Cabarrocas, P.

PY - 2006/6/15

Y1 - 2006/6/15

N2 - We have studied structural and electronic properties of μc-Si:H films deposited from SiH4 + H2 and SiH4 + H2 + Ar gas mixtures. The use of Ar containing gas mixtures for depositions allows us to increase deposition rate by a factor of two and to obtain films with an important fraction of large grains in comparison with SiH4 + H2 gas mixtures. Electronic properties of fully crystallized films become more intrinsic with the increase of large grain fraction. Deposition of highly p- and n-doped μc-Si:H layers from the dopant/SiH4 + H2 gas mixture at a temperature of 175 °C is possible without any remarkable changes in crystallinity in comparison with undoped films deposited with the same discharge conditions.

AB - We have studied structural and electronic properties of μc-Si:H films deposited from SiH4 + H2 and SiH4 + H2 + Ar gas mixtures. The use of Ar containing gas mixtures for depositions allows us to increase deposition rate by a factor of two and to obtain films with an important fraction of large grains in comparison with SiH4 + H2 gas mixtures. Electronic properties of fully crystallized films become more intrinsic with the increase of large grain fraction. Deposition of highly p- and n-doped μc-Si:H layers from the dopant/SiH4 + H2 gas mixture at a temperature of 175 °C is possible without any remarkable changes in crystallinity in comparison with undoped films deposited with the same discharge conditions.

KW - Chemical vapor deposition

KW - Conductivity

KW - Ellipsometry

KW - Microcrystallinity

KW - Nanoparticles

KW - Raman spectroscopy

KW - Solar cells

KW - Thin film transistors

U2 - 10.1016/j.jnoncrysol.2005.10.060

DO - 10.1016/j.jnoncrysol.2005.10.060

M3 - Article

AN - SCOPUS:33745458944

SN - 0022-3093

VL - 352

SP - 964

EP - 967

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 9-20 SPEC. ISS.

ER -

Large grain μc-Si:H films deposited at low temperature: Growth process and electronic properties

Abstract

Keywords

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