Large inverted band gap in strained three-layer InAs/GaInSb quantum wells

C. Avogadri; S. Gebert; S. S. Krishtopenko; I. Castillo; C. Consejo; S. Ruffenach; C. Roblin; C. Bray; Y. Krupko; S. Juillaguet; S. Contreras; A. Wolf; F. Hartmann; S. Höfling; G. Boissier; J. B. Rodriguez; S. Nanot; E. Tournié; F. Teppe; B. Jouault

doi:10.1103/PhysRevResearch.4.L042042

Large inverted band gap in strained three-layer InAs/GaInSb quantum wells

C. Avogadri, S. Gebert, S. S. Krishtopenko, I. Castillo, C. Consejo, S. Ruffenach, C. Roblin, C. Bray, Y. Krupko, S. Juillaguet, S. Contreras, A. Wolf, F. Hartmann, S. Höfling, G. Boissier, J. B. Rodriguez, S. Nanot, E. Tournié, F. Teppe, B. Jouault

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Abstract

Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band gaps of about 10-18 meV. The former, however, features a band gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature independent. Here, we report on the realization of a large inverted band gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. By combining local and nonlocal measurements, we detect edge conductivity at temperatures up to 40 K, possibly of topological origin, with equilibrium lengths of a few micrometers. Our results pave the way for the manipulation of topological edge states at high temperatures in QW heterostructures.

Original language	English
Article number	L042042
Journal	Physical Review Research
Volume	4
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevResearch.4.L042042
Publication status	Published - 1 Oct 2022
Externally published	Yes

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Avogadri, C., Gebert, S., Krishtopenko, S. S., Castillo, I., Consejo, C., Ruffenach, S., Roblin, C., Bray, C., Krupko, Y., Juillaguet, S., Contreras, S., Wolf, A., Hartmann, F., Höfling, S., Boissier, G., Rodriguez, J. B., Nanot, S., Tournié, E., Teppe, F., & Jouault, B. (2022). Large inverted band gap in strained three-layer InAs/GaInSb quantum wells. Physical Review Research, 4(4), Article L042042. https://doi.org/10.1103/PhysRevResearch.4.L042042

@article{b041e362263a4bf789f2e5713a7fc58b,

title = "Large inverted band gap in strained three-layer InAs/GaInSb quantum wells",

abstract = "Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band gaps of about 10-18 meV. The former, however, features a band gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature independent. Here, we report on the realization of a large inverted band gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. By combining local and nonlocal measurements, we detect edge conductivity at temperatures up to 40 K, possibly of topological origin, with equilibrium lengths of a few micrometers. Our results pave the way for the manipulation of topological edge states at high temperatures in QW heterostructures.",

author = "C. Avogadri and S. Gebert and Krishtopenko, \{S. S.\} and I. Castillo and C. Consejo and S. Ruffenach and C. Roblin and C. Bray and Y. Krupko and S. Juillaguet and S. Contreras and A. Wolf and F. Hartmann and S. H{\"o}fling and G. Boissier and Rodriguez, \{J. B.\} and S. Nanot and E. Tourni{\'e} and F. Teppe and B. Jouault",

note = "Publisher Copyright: {\textcopyright} 2022 authors. Published by the American Physical Society.",

year = "2022",

month = oct,

day = "1",

doi = "10.1103/PhysRevResearch.4.L042042",

language = "English",

volume = "4",

journal = "Physical Review Research",

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Avogadri, C, Gebert, S, Krishtopenko, SS, Castillo, I, Consejo, C, Ruffenach, S, Roblin, C, Bray, C, Krupko, Y, Juillaguet, S, Contreras, S, Wolf, A, Hartmann, F, Höfling, S, Boissier, G, Rodriguez, JB, Nanot, S, Tournié, E, Teppe, F & Jouault, B 2022, 'Large inverted band gap in strained three-layer InAs/GaInSb quantum wells', Physical Review Research, vol. 4, no. 4, L042042. https://doi.org/10.1103/PhysRevResearch.4.L042042

TY - JOUR

T1 - Large inverted band gap in strained three-layer InAs/GaInSb quantum wells

AU - Avogadri, C.

AU - Gebert, S.

AU - Krishtopenko, S. S.

AU - Castillo, I.

AU - Consejo, C.

AU - Ruffenach, S.

AU - Roblin, C.

AU - Bray, C.

AU - Krupko, Y.

AU - Juillaguet, S.

AU - Contreras, S.

AU - Wolf, A.

AU - Hartmann, F.

AU - Höfling, S.

AU - Boissier, G.

AU - Rodriguez, J. B.

AU - Nanot, S.

AU - Tournié, E.

AU - Teppe, F.

AU - Jouault, B.

PY - 2022/10/1

Y1 - 2022/10/1

N2 - Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band gaps of about 10-18 meV. The former, however, features a band gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature independent. Here, we report on the realization of a large inverted band gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. By combining local and nonlocal measurements, we detect edge conductivity at temperatures up to 40 K, possibly of topological origin, with equilibrium lengths of a few micrometers. Our results pave the way for the manipulation of topological edge states at high temperatures in QW heterostructures.

AB - Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band gaps of about 10-18 meV. The former, however, features a band gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature independent. Here, we report on the realization of a large inverted band gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. By combining local and nonlocal measurements, we detect edge conductivity at temperatures up to 40 K, possibly of topological origin, with equilibrium lengths of a few micrometers. Our results pave the way for the manipulation of topological edge states at high temperatures in QW heterostructures.

UR - https://www.scopus.com/pages/publications/85144610230

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DO - 10.1103/PhysRevResearch.4.L042042

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AN - SCOPUS:85144610230

SN - 2643-1564

VL - 4

JO - Physical Review Research

JF - Physical Review Research

IS - 4

M1 - L042042

ER -

Large inverted band gap in strained three-layer InAs/GaInSb quantum wells

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