Large magnetoresistance in tunnel junctions with an iron oxide electrode

P. Seneor; A. Fert; J. L. Maurice; F. Montaigne; F. Petroff; A. Vaurès

doi:10.1063/1.123246

Large magnetoresistance in tunnel junctions with an iron oxide electrode

P. Seneor, A. Fert, J. L. Maurice, F. Montaigne, F. Petroff, A. Vaurès

Thales Group

Research output: Contribution to journal › Article › peer-review

Abstract

Tunnel junctions combining Co and iron oxide electrodes separated by a well known alumina barrier are fabricated. Large tunnel magnetoresistance (MR) effects reaching 43% at 4.2 K and 13% at room temperature are observed, correlated with the existence of a spinel-like structure for the iron oxide layer. A striking feature of these new junctions is the drop of the MR ratio at low temperature and bias, between ±10 mV, which suggests that the MR comes mainly from the activation of tunneling channels through spin polarized levels above and below E_F in the iron oxide electrode.

Original language	English
Pages (from-to)	4017-4019
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	26
DOIs	https://doi.org/10.1063/1.123246
Publication status	Published - 28 Jun 1999
Externally published	Yes

Access to Document

10.1063/1.123246

Cite this

@article{ec9a6001471e427e871a606a5bd88a8c,

title = "Large magnetoresistance in tunnel junctions with an iron oxide electrode",

abstract = "Tunnel junctions combining Co and iron oxide electrodes separated by a well known alumina barrier are fabricated. Large tunnel magnetoresistance (MR) effects reaching 43\% at 4.2 K and 13\% at room temperature are observed, correlated with the existence of a spinel-like structure for the iron oxide layer. A striking feature of these new junctions is the drop of the MR ratio at low temperature and bias, between ±10 mV, which suggests that the MR comes mainly from the activation of tunneling channels through spin polarized levels above and below EF in the iron oxide electrode.",

author = "P. Seneor and A. Fert and Maurice, \{J. L.\} and F. Montaigne and F. Petroff and A. Vaur{\`e}s",

year = "1999",

month = jun,

day = "28",

doi = "10.1063/1.123246",

language = "English",

volume = "74",

pages = "4017--4019",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "26",

}

TY - JOUR

T1 - Large magnetoresistance in tunnel junctions with an iron oxide electrode

AU - Seneor, P.

AU - Fert, A.

AU - Maurice, J. L.

AU - Montaigne, F.

AU - Petroff, F.

AU - Vaurès, A.

PY - 1999/6/28

Y1 - 1999/6/28

N2 - Tunnel junctions combining Co and iron oxide electrodes separated by a well known alumina barrier are fabricated. Large tunnel magnetoresistance (MR) effects reaching 43% at 4.2 K and 13% at room temperature are observed, correlated with the existence of a spinel-like structure for the iron oxide layer. A striking feature of these new junctions is the drop of the MR ratio at low temperature and bias, between ±10 mV, which suggests that the MR comes mainly from the activation of tunneling channels through spin polarized levels above and below EF in the iron oxide electrode.

AB - Tunnel junctions combining Co and iron oxide electrodes separated by a well known alumina barrier are fabricated. Large tunnel magnetoresistance (MR) effects reaching 43% at 4.2 K and 13% at room temperature are observed, correlated with the existence of a spinel-like structure for the iron oxide layer. A striking feature of these new junctions is the drop of the MR ratio at low temperature and bias, between ±10 mV, which suggests that the MR comes mainly from the activation of tunneling channels through spin polarized levels above and below EF in the iron oxide electrode.

U2 - 10.1063/1.123246

DO - 10.1063/1.123246

M3 - Article

AN - SCOPUS:0032607716

SN - 0003-6951

VL - 74

SP - 4017

EP - 4019

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Large magnetoresistance in tunnel junctions with an iron oxide electrode

Abstract

Access to Document

Fingerprint

Cite this