Large-signal capabilities of an optically injection-locked semiconductor laser using gain lever

  • J. M. Sarraute
  • , K. Schires
  • , S. Larochelle
  • , F. Grillot

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Directly-modulated lasers remain excellent candidates for the development of efficient and low-cost short communication links. While the modulation bandwidth of semiconductor lasers is inherently limited by the relaxation oscillations due carrier-photon interaction, it is possible to further enhance the modulation dynamics by using nonlinear architectures. Our recent studies has revealed the high potential of the optically injection-locked semiconductor laser operating under gain lever effect. Modulation bandwidth as large as 85 GHz namely four times larger than that of the free-running semiconductor laser has been unveiled. In this work, we numerically investigate the large-signal capabilities of this transmitter by evaluating eye diagrams and bit error rates. The results confirm its high potential for short communication links operating at high-speeds.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XXVI
EditorsMarek Osinski, Yasuhiko Arakawa, Bernd Witzigmann
PublisherSPIE
ISBN (Electronic)9781510615373
DOIs
Publication statusPublished - 1 Jan 2018
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices XXVI 2018 - San Francisco, United States
Duration: 29 Jan 20181 Feb 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10526
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferencePhysics and Simulation of Optoelectronic Devices XXVI 2018
Country/TerritoryUnited States
CitySan Francisco
Period29/01/181/02/18

Keywords

  • Semiconductor laser
  • gain lever
  • high-speed communications
  • injection-locking

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