Large-signal performance of high-BVCEO graded epi-base SiGe HBTs at wireless frequencies

D. R. Greenberg; M. Rivier; P. Girard; E. Bergeault; J. Moniz; D. Ahlgren; G. Freeman; S. Subbanna; S. J. Jeng; K. Stein; D. Nguyen-Ngoc; K. Schonenberg; J. Malinowski; D. Colavito; D. L. Harame; B. Meyerson

Large-signal performance of high-BV_CEO graded epi-base SiGe HBTs at wireless frequencies

D. R. Greenberg, M. Rivier, P. Girard, E. Bergeault, J. Moniz, D. Ahlgren, G. Freeman, S. Subbanna, S. J. Jeng, K. Stein, D. Nguyen-Ngoc, K. Schonenberg, J. Malinowski, D. Colavito, D. L. Harame, B. Meyerson

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Research output: Contribution to journal › Conference article › peer-review

Abstract

To address the needs of 3 V wireless components such as power amplifiers, we have added a new, high-breakdown (6 V) HBT to IBM's 200 mm SiGe technology and explore the large-signal performance for the first time. At 0.9 GHz and 1.8 GHz, we observe excellent power densities of up to 1.36 mW/μm², outstanding PAE reaching 70% and no performance degradation in integrating the HBT with CMOS.

Original language	English
Pages (from-to)	799-802
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1 Dec 1997
Externally published	Yes
Event	1997 International Electron Devices Meeting - Washington, DC, USA Duration: 7 Dec 1997 → 10 Dec 1997

Cite this

Greenberg, D. R., Rivier, M., Girard, P., Bergeault, E., Moniz, J., Ahlgren, D., Freeman, G., Subbanna, S., Jeng, S. J., Stein, K., Nguyen-Ngoc, D., Schonenberg, K., Malinowski, J., Colavito, D., Harame, D. L., & Meyerson, B. (1997). Large-signal performance of high-BV_CEO graded epi-base SiGe HBTs at wireless frequencies. Technical Digest - International Electron Devices Meeting, 799-802.

@article{06e29171e6d34c00b10ba9ebbff1df4f,

title = "Large-signal performance of high-BVCEO graded epi-base SiGe HBTs at wireless frequencies",

abstract = "To address the needs of 3 V wireless components such as power amplifiers, we have added a new, high-breakdown (6 V) HBT to IBM's 200 mm SiGe technology and explore the large-signal performance for the first time. At 0.9 GHz and 1.8 GHz, we observe excellent power densities of up to 1.36 mW/μm2, outstanding PAE reaching 70\% and no performance degradation in integrating the HBT with CMOS.",

author = "Greenberg, \{D. R.\} and M. Rivier and P. Girard and E. Bergeault and J. Moniz and D. Ahlgren and G. Freeman and S. Subbanna and Jeng, \{S. J.\} and K. Stein and D. Nguyen-Ngoc and K. Schonenberg and J. Malinowski and D. Colavito and Harame, \{D. L.\} and B. Meyerson",

year = "1997",

month = dec,

day = "1",

language = "English",

pages = "799--802",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

note = "1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

}

Greenberg, DR, Rivier, M, Girard, P, Bergeault, E, Moniz, J, Ahlgren, D, Freeman, G, Subbanna, S, Jeng, SJ, Stein, K, Nguyen-Ngoc, D, Schonenberg, K, Malinowski, J, Colavito, D, Harame, DL & Meyerson, B 1997, 'Large-signal performance of high-BV_CEO graded epi-base SiGe HBTs at wireless frequencies', Technical Digest - International Electron Devices Meeting, pp. 799-802.

TY - JOUR

T1 - Large-signal performance of high-BVCEO graded epi-base SiGe HBTs at wireless frequencies

AU - Greenberg, D. R.

AU - Rivier, M.

AU - Girard, P.

AU - Bergeault, E.

AU - Moniz, J.

AU - Ahlgren, D.

AU - Freeman, G.

AU - Subbanna, S.

AU - Jeng, S. J.

AU - Stein, K.

AU - Nguyen-Ngoc, D.

AU - Schonenberg, K.

AU - Malinowski, J.

AU - Colavito, D.

AU - Harame, D. L.

AU - Meyerson, B.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - To address the needs of 3 V wireless components such as power amplifiers, we have added a new, high-breakdown (6 V) HBT to IBM's 200 mm SiGe technology and explore the large-signal performance for the first time. At 0.9 GHz and 1.8 GHz, we observe excellent power densities of up to 1.36 mW/μm2, outstanding PAE reaching 70% and no performance degradation in integrating the HBT with CMOS.

AB - To address the needs of 3 V wireless components such as power amplifiers, we have added a new, high-breakdown (6 V) HBT to IBM's 200 mm SiGe technology and explore the large-signal performance for the first time. At 0.9 GHz and 1.8 GHz, we observe excellent power densities of up to 1.36 mW/μm2, outstanding PAE reaching 70% and no performance degradation in integrating the HBT with CMOS.

M3 - Conference article

AN - SCOPUS:84886448112

SN - 0163-1918

SP - 799

EP - 802

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -

Large-signal performance of high-BVCEO graded epi-base SiGe HBTs at wireless frequencies

Abstract

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Large-signal performance of high-BV_CEO graded epi-base SiGe HBTs at wireless frequencies