Largely tunable midinfrared (8-12 μm) difference frequency generation in isotropic semiconductors

R. Haïdar, A. Mustelier, P. Kupecek, E. Rosencher, R. Triboulet, P. Lemasson, G. Mennerat

Research output: Contribution to journalArticlepeer-review

Abstract

Largely tunable midinfrared (8-12 μm) generation is obtained in GaAs and ZnSe slabs by difference frequency mixing of optical parametric oscillator output waves (∼2 μm). The coherence lengths determined in semiconductor wedges are in excellent agreement with estimates from known Sellmeir formulas.

Original languageEnglish
Pages (from-to)2550-2552
Number of pages3
JournalJournal of Applied Physics
Volume91
Issue number4
DOIs
Publication statusPublished - 15 Feb 2002
Externally publishedYes

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