Largely tunable midinfrared (8-12 μm) difference frequency generation in isotropic semiconductors

R. Haïdar; A. Mustelier; P. Kupecek; E. Rosencher; R. Triboulet; P. Lemasson; G. Mennerat

doi:10.1063/1.1435412

Largely tunable midinfrared (8-12 μm) difference frequency generation in isotropic semiconductors

R. Haïdar
, A. Mustelier
, P. Kupecek
, E. Rosencher
, R. Triboulet
, P. Lemasson
, G. Mennerat

ONERA Office National d'Etudes et Recherches Aerospatiales
Department of Physics

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Largely tunable midinfrared (8-12 μm) generation is obtained in GaAs and ZnSe slabs by difference frequency mixing of optical parametric oscillator output waves (∼2 μm). The coherence lengths determined in semiconductor wedges are in excellent agreement with estimates from known Sellmeir formulas.

Original language	English
Pages (from-to)	2550-2552
Number of pages	3
Journal	Journal of Applied Physics
Volume	91
Issue number	4
DOIs	https://doi.org/10.1063/1.1435412
Publication status	Published - 15 Feb 2002
Externally published	Yes

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title = "Largely tunable midinfrared (8-12 μm) difference frequency generation in isotropic semiconductors",

abstract = "Largely tunable midinfrared (8-12 μm) generation is obtained in GaAs and ZnSe slabs by difference frequency mixing of optical parametric oscillator output waves (∼2 μm). The coherence lengths determined in semiconductor wedges are in excellent agreement with estimates from known Sellmeir formulas.",

author = "R. Ha{\"i}dar and A. Mustelier and P. Kupecek and E. Rosencher and R. Triboulet and P. Lemasson and G. Mennerat",

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AU - Haïdar, R.

AU - Mustelier, A.

AU - Kupecek, P.

AU - Rosencher, E.

AU - Triboulet, R.

AU - Lemasson, P.

AU - Mennerat, G.

PY - 2002/2/15

Y1 - 2002/2/15

N2 - Largely tunable midinfrared (8-12 μm) generation is obtained in GaAs and ZnSe slabs by difference frequency mixing of optical parametric oscillator output waves (∼2 μm). The coherence lengths determined in semiconductor wedges are in excellent agreement with estimates from known Sellmeir formulas.

AB - Largely tunable midinfrared (8-12 μm) generation is obtained in GaAs and ZnSe slabs by difference frequency mixing of optical parametric oscillator output waves (∼2 μm). The coherence lengths determined in semiconductor wedges are in excellent agreement with estimates from known Sellmeir formulas.

U2 - 10.1063/1.1435412

DO - 10.1063/1.1435412

M3 - Article

AN - SCOPUS:84861426833

SN - 0021-8979

VL - 91

SP - 2550

EP - 2552

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Largely tunable midinfrared (8-12 μm) difference frequency generation in isotropic semiconductors

Abstract

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