Abstract
A laser beam irradiating a semiconductor in its transparency region induces a splitting of the exciton line through the dependence of the optical Stark effect on the different transition matrix elements. The splitting is observed in bulk and multiple-quantum-well GaAs, by femtosecond time-resolved spectroscopy for various polarization configurations. Experimental results are in good agreement with theory.
| Original language | English |
|---|---|
| Pages (from-to) | 74-77 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 62 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 1989 |