Laser-induced exciton splitting

M. Joffre; D. Hulin; A. Migus; M. Combescot

doi:10.1103/PhysRevLett.62.74

Laser-induced exciton splitting

M. Joffre
, D. Hulin
, A. Migus
, M. Combescot

Laboratory d'Optique Appliquée, ENSTA, CNRS-École Polytechnique
PSL research University & IPSL

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

A laser beam irradiating a semiconductor in its transparency region induces a splitting of the exciton line through the dependence of the optical Stark effect on the different transition matrix elements. The splitting is observed in bulk and multiple-quantum-well GaAs, by femtosecond time-resolved spectroscopy for various polarization configurations. Experimental results are in good agreement with theory.

Original language	English
Pages (from-to)	74-77
Number of pages	4
Journal	Physical Review Letters
Volume	62
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevLett.62.74
Publication status	Published - 1 Jan 1989

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10.1103/PhysRevLett.62.74

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title = "Laser-induced exciton splitting",

abstract = "A laser beam irradiating a semiconductor in its transparency region induces a splitting of the exciton line through the dependence of the optical Stark effect on the different transition matrix elements. The splitting is observed in bulk and multiple-quantum-well GaAs, by femtosecond time-resolved spectroscopy for various polarization configurations. Experimental results are in good agreement with theory.",

author = "M. Joffre and D. Hulin and A. Migus and M. Combescot",

year = "1989",

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AU - Migus, A.

AU - Combescot, M.

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N2 - A laser beam irradiating a semiconductor in its transparency region induces a splitting of the exciton line through the dependence of the optical Stark effect on the different transition matrix elements. The splitting is observed in bulk and multiple-quantum-well GaAs, by femtosecond time-resolved spectroscopy for various polarization configurations. Experimental results are in good agreement with theory.

AB - A laser beam irradiating a semiconductor in its transparency region induces a splitting of the exciton line through the dependence of the optical Stark effect on the different transition matrix elements. The splitting is observed in bulk and multiple-quantum-well GaAs, by femtosecond time-resolved spectroscopy for various polarization configurations. Experimental results are in good agreement with theory.

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DO - 10.1103/PhysRevLett.62.74

M3 - Article

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SN - 0031-9007

VL - 62

SP - 74

EP - 77

JO - Physical Review Letters

JF - Physical Review Letters

IS - 1

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Laser-induced exciton splitting

Abstract

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