Lasing spectra of 1.55 μm InAs/InP quantum dot lasers: Theoretical analysis and comparison with the experiments

K. Veselinov, F. Grillot, M. Gioannini, I. Montrosset, E. Homeyer, R. Piron, J. Even, A. Bekiarski, S. Loualiche

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, a theoretical model is used to investigate the lasing spectrum properties of InAs/InP (113)B quantum dot (QD) lasers emitting at 1.55 μm. The numerical model used is based on a multi-population rate equation (MPRE) analysis. It takes into account the effect of the competition between the inhomogeneous broadening (due to the QD size dispersion) and the homogenous broadening as well as a nonlinear gain variation associated to a multimode laser emission. The double laser emission and the temperature dependence of lasing spectra of self-assembled InAs/InP quantum dot lasers is studied both experimentally and theoretically.

Original languageEnglish
Pages (from-to)227-237
Number of pages11
JournalOptical and Quantum Electronics
Volume40
Issue number2-4
DOIs
Publication statusPublished - 1 Mar 2008
Externally publishedYes

Keywords

  • Carrier dynamics
  • Quantum dots
  • Rate equations
  • Semiconductor laser

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