Life Cycle Assessment of etching processes for FDSOI transistors technologies

Mickaël Renaud; Aurélien Sarrazin; Joao Lopes-Barbosa; Yannick Rivoira; Isabelle Servin; François Boulard

doi:10.1117/12.3009969

Life Cycle Assessment of etching processes for FDSOI transistors technologies

Mickaël Renaud
, Aurélien Sarrazin
, Joao Lopes-Barbosa
, Yannick Rivoira
, Isabelle Servin
, François Boulard

LTHE (UMR 5564 CNRS/IRD/Université de Grenoble)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The semiconductor industry is aware of its high resource consumption and overall impact on the environment and is working to minimize it. Especially, the use of perfluorocarbons (PFC) during the dry etching and deposit steps of device manufacturing is a major concern because of the extremely high global warming potential (GWP) and lifetime of most of those compounds. Consequently, plasma etching significantly contributes to CO2 emissions for sub-28 nm technologies on Scope 1 & 2 emissions. Currently, CEA-Leti is developing a 10 nm node on FDSOI (Fully Depleted Silicon On Insulator) technology. In this framework, we present Life Cycle Assessment (LCA) of etching processes for FDSOI transistor technologies. A comparison of impacts between the 28 nm node and 10 nm one is then conducted for FEOL and MEOL processes. Finally, based on these results, some eco-innovation proposals are discussed.

Original language	English
Title of host publication	Advanced Etch Technology and Process Integration for Nanopatterning XIII
Editors	Nihar Mohanty, Efrain Altamirano-Sanchez
Publisher	SPIE
ISBN (Electronic)	9781510672222
DOIs	https://doi.org/10.1117/12.3009969
Publication status	Published - 1 Jan 2024
Externally published	Yes
Event	Advanced Etch Technology and Process Integration for Nanopatterning XIII 2024 - San Jose, United States Duration: 26 Feb 2024 → 29 Feb 2024

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	12958
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Advanced Etch Technology and Process Integration for Nanopatterning XIII 2024
Country/Territory	United States
City	San Jose
Period	26/02/24 → 29/02/24

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy
SDG 12 Responsible Consumption and Production
SDG 13 Climate Action

Keywords

FDSOI
GWP
LCA
PFC
Plasma etching
Semiconductor
Sustainability
eco-innovation

Access to Document

10.1117/12.3009969

Cite this

Renaud, M., Sarrazin, A., Lopes-Barbosa, J., Rivoira, Y., Servin, I., & Boulard, F. (2024). Life Cycle Assessment of etching processes for FDSOI transistors technologies. In N. Mohanty, & E. Altamirano-Sanchez (Eds.), Advanced Etch Technology and Process Integration for Nanopatterning XIII Article 129580K (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12958). SPIE. https://doi.org/10.1117/12.3009969

@inproceedings{e05a094ae91d45a68460895442bd212a,

title = "Life Cycle Assessment of etching processes for FDSOI transistors technologies",

abstract = "The semiconductor industry is aware of its high resource consumption and overall impact on the environment and is working to minimize it. Especially, the use of perfluorocarbons (PFC) during the dry etching and deposit steps of device manufacturing is a major concern because of the extremely high global warming potential (GWP) and lifetime of most of those compounds. Consequently, plasma etching significantly contributes to CO2 emissions for sub-28 nm technologies on Scope 1 \& 2 emissions. Currently, CEA-Leti is developing a 10 nm node on FDSOI (Fully Depleted Silicon On Insulator) technology. In this framework, we present Life Cycle Assessment (LCA) of etching processes for FDSOI transistor technologies. A comparison of impacts between the 28 nm node and 10 nm one is then conducted for FEOL and MEOL processes. Finally, based on these results, some eco-innovation proposals are discussed.",

keywords = "FDSOI, GWP, LCA, PFC, Plasma etching, Semiconductor, Sustainability, eco-innovation",

author = "Micka{\"e}l Renaud and Aur{\'e}lien Sarrazin and Joao Lopes-Barbosa and Yannick Rivoira and Isabelle Servin and Fran{\c c}ois Boulard",

note = "Publisher Copyright: {\textcopyright} 2024 SPIE.; Advanced Etch Technology and Process Integration for Nanopatterning XIII 2024 ; Conference date: 26-02-2024 Through 29-02-2024",

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month = jan,

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doi = "10.1117/12.3009969",

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Renaud, M, Sarrazin, A, Lopes-Barbosa, J, Rivoira, Y, Servin, I & Boulard, F 2024, Life Cycle Assessment of etching processes for FDSOI transistors technologies. in N Mohanty & E Altamirano-Sanchez (eds), Advanced Etch Technology and Process Integration for Nanopatterning XIII., 129580K, Proceedings of SPIE - The International Society for Optical Engineering, vol. 12958, SPIE, Advanced Etch Technology and Process Integration for Nanopatterning XIII 2024, San Jose, United States, 26/02/24. https://doi.org/10.1117/12.3009969

Life Cycle Assessment of etching processes for FDSOI transistors technologies. / Renaud, Mickaël; Sarrazin, Aurélien; Lopes-Barbosa, Joao et al.
Advanced Etch Technology and Process Integration for Nanopatterning XIII. ed. / Nihar Mohanty; Efrain Altamirano-Sanchez. SPIE, 2024. 129580K (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12958).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Life Cycle Assessment of etching processes for FDSOI transistors technologies

AU - Renaud, Mickaël

AU - Sarrazin, Aurélien

AU - Lopes-Barbosa, Joao

AU - Rivoira, Yannick

AU - Servin, Isabelle

AU - Boulard, François

PY - 2024/1/1

Y1 - 2024/1/1

N2 - The semiconductor industry is aware of its high resource consumption and overall impact on the environment and is working to minimize it. Especially, the use of perfluorocarbons (PFC) during the dry etching and deposit steps of device manufacturing is a major concern because of the extremely high global warming potential (GWP) and lifetime of most of those compounds. Consequently, plasma etching significantly contributes to CO2 emissions for sub-28 nm technologies on Scope 1 & 2 emissions. Currently, CEA-Leti is developing a 10 nm node on FDSOI (Fully Depleted Silicon On Insulator) technology. In this framework, we present Life Cycle Assessment (LCA) of etching processes for FDSOI transistor technologies. A comparison of impacts between the 28 nm node and 10 nm one is then conducted for FEOL and MEOL processes. Finally, based on these results, some eco-innovation proposals are discussed.

AB - The semiconductor industry is aware of its high resource consumption and overall impact on the environment and is working to minimize it. Especially, the use of perfluorocarbons (PFC) during the dry etching and deposit steps of device manufacturing is a major concern because of the extremely high global warming potential (GWP) and lifetime of most of those compounds. Consequently, plasma etching significantly contributes to CO2 emissions for sub-28 nm technologies on Scope 1 & 2 emissions. Currently, CEA-Leti is developing a 10 nm node on FDSOI (Fully Depleted Silicon On Insulator) technology. In this framework, we present Life Cycle Assessment (LCA) of etching processes for FDSOI transistor technologies. A comparison of impacts between the 28 nm node and 10 nm one is then conducted for FEOL and MEOL processes. Finally, based on these results, some eco-innovation proposals are discussed.

KW - FDSOI

KW - GWP

KW - LCA

KW - PFC

KW - Plasma etching

KW - Semiconductor

KW - Sustainability

KW - eco-innovation

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DO - 10.1117/12.3009969

M3 - Conference contribution

AN - SCOPUS:85193049989

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Advanced Etch Technology and Process Integration for Nanopatterning XIII

A2 - Mohanty, Nihar

A2 - Altamirano-Sanchez, Efrain

PB - SPIE

T2 - Advanced Etch Technology and Process Integration for Nanopatterning XIII 2024

Y2 - 26 February 2024 through 29 February 2024

ER -

Renaud M, Sarrazin A, Lopes-Barbosa J, Rivoira Y, Servin I, Boulard F. Life Cycle Assessment of etching processes for FDSOI transistors technologies. In Mohanty N, Altamirano-Sanchez E, editors, Advanced Etch Technology and Process Integration for Nanopatterning XIII. SPIE. 2024. 129580K. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.3009969

Life Cycle Assessment of etching processes for FDSOI transistors technologies

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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