TY - GEN
T1 - Light absorption enhancement in ultra-thin layers for hot-carrier solar cells
T2 - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII 2019
AU - Giteau, Maxime
AU - Watanabe, Kentaroh
AU - Miyashita, Naoya
AU - Sodabanlu, Hassanet
AU - Goffard, Julie
AU - Delamarre, Amaury
AU - Suchet, Daniel
AU - Tamaki, Ryo
AU - Jehl, Zacharie
AU - Lombez, Laurent
AU - Sugiyama, Masakazu
AU - Cattoni, Andrea
AU - Collin, Stéphane
AU - Guillemoles, Jean François
AU - Okada, Yoshitaka
N1 - Publisher Copyright:
© 2019 SPIE.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Hot-carrier solar cells (HCSC) can potentially overcome the Shockley-Queisser limit, by having carriers at a higher temperature than the lattice. To this end, the carriers need to thermalize slower than power is generated by absorbing photons. In thin films, a hot-carrier distribution can only be achieved with very high incident power, by saturating the thermalization channels. Ultra-thin absorbers have a smaller thermalization rate, due to fewer channels. However, they typically absorb only a limited amount of light, which prevents them from reaching high efficiencies. Light trapping is an excellent way to increase significantly the amount of light absorbed in an ultra-thin material. Yet, studies on the coupling between light trapping and hot carriers are still lacking, due to the complexity of the whole system. We analyze numerically and experimentally how light trapping can enable high-efficiency HCSC. This manuscript presents the progress towards the experimental demonstration of the enhancement of the hot-carrier effect with light trapping. 280 nm-thick devices have successfully been reported on a gold mirror using epitaxial lift-off (ELO) and gold-gold bonding. These devices have been characterized by photoluminescence spectroscopy. Hot carriers with a temperature 37 K above lattice temperature were measured, in accordance with theoretical predictions. We are now working towards the ELO of absorbers 10 times thinner, on which we will implement light trapping to increase the carrier temperature.
AB - Hot-carrier solar cells (HCSC) can potentially overcome the Shockley-Queisser limit, by having carriers at a higher temperature than the lattice. To this end, the carriers need to thermalize slower than power is generated by absorbing photons. In thin films, a hot-carrier distribution can only be achieved with very high incident power, by saturating the thermalization channels. Ultra-thin absorbers have a smaller thermalization rate, due to fewer channels. However, they typically absorb only a limited amount of light, which prevents them from reaching high efficiencies. Light trapping is an excellent way to increase significantly the amount of light absorbed in an ultra-thin material. Yet, studies on the coupling between light trapping and hot carriers are still lacking, due to the complexity of the whole system. We analyze numerically and experimentally how light trapping can enable high-efficiency HCSC. This manuscript presents the progress towards the experimental demonstration of the enhancement of the hot-carrier effect with light trapping. 280 nm-thick devices have successfully been reported on a gold mirror using epitaxial lift-off (ELO) and gold-gold bonding. These devices have been characterized by photoluminescence spectroscopy. Hot carriers with a temperature 37 K above lattice temperature were measured, in accordance with theoretical predictions. We are now working towards the ELO of absorbers 10 times thinner, on which we will implement light trapping to increase the carrier temperature.
KW - Hot-carrier solar cells
KW - epitaxial lift-off
KW - light trapping
KW - thermalization
KW - ultra-thin
UR - https://www.scopus.com/pages/publications/85066151626
U2 - 10.1117/12.2505908
DO - 10.1117/12.2505908
M3 - Conference contribution
AN - SCOPUS:85066151626
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII
A2 - Freundlich, Alexandre
A2 - Sugiyama, Masakazu
A2 - Lombez, Laurent
A2 - Lombez, Laurent
PB - SPIE
Y2 - 5 February 2019 through 7 February 2019
ER -