Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)

P. G. Gucciardi; J. C. Valmalette; M. Lopes; R. Dèturche; M. Lamy De La Chapelle; D. Barchiesi; F. Bonaccorso; C. D'Andrea; M. Chaigneau; G. Picardi; R. Ossikovski

doi:10.1478/C1V89S1P042

Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)

P. G. Gucciardi
, J. C. Valmalette
, M. Lopes
, R. Dèturche
, M. Lamy De La Chapelle
, D. Barchiesi
, F. Bonaccorso
, C. D'Andrea
, M. Chaigneau
, G. Picardi
, R. Ossikovski

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the effects of light depolarization induced by sharp metallic tips in Tip-Enhanced Raman Spectroscopy (TERS). Experiments on Si(001) and GaAs(001) crystals show that the excitation feld depolarization induces a selective enhancement of specifc Raman modes, depending on their Raman tensor symmetry. A complete polarization analysis of the light backscattered from the tip confrms the TERS fndings. The spatial confnement of the depolarization feld is studied and its dependence on the excitation wavelength and power are explored.

Original language	English
Journal	AAPP Atti della Accademia Peloritana dei Pericolanti, Classe di Scienze Fisiche, Matematiche e Naturali
Volume	89
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1478/C1V89S1P042
Publication status	Published - 1 Dec 2011

Access to Document

10.1478/C1V89S1P042

Cite this

Gucciardi, P. G., Valmalette, J. C., Lopes, M., Dèturche, R., Lamy De La Chapelle, M., Barchiesi, D., Bonaccorso, F., D'Andrea, C., Chaigneau, M., Picardi, G., & Ossikovski, R. (2011). Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001). AAPP Atti della Accademia Peloritana dei Pericolanti, Classe di Scienze Fisiche, Matematiche e Naturali, 89(SUPPL. 1). https://doi.org/10.1478/C1V89S1P042

@article{7bc39c5155334b48a0638798919bc559,

title = "Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)",

abstract = "We report on the effects of light depolarization induced by sharp metallic tips in Tip-Enhanced Raman Spectroscopy (TERS). Experiments on Si(001) and GaAs(001) crystals show that the excitation feld depolarization induces a selective enhancement of specifc Raman modes, depending on their Raman tensor symmetry. A complete polarization analysis of the light backscattered from the tip confrms the TERS fndings. The spatial confnement of the depolarization feld is studied and its dependence on the excitation wavelength and power are explored.",

author = "Gucciardi, \{P. G.\} and Valmalette, \{J. C.\} and M. Lopes and R. D{\`e}turche and \{Lamy De La Chapelle\}, M. and D. Barchiesi and F. Bonaccorso and C. D'Andrea and M. Chaigneau and G. Picardi and R. Ossikovski",

year = "2011",

month = dec,

day = "1",

doi = "10.1478/C1V89S1P042",

language = "English",

volume = "89",

journal = "AAPP Atti della Accademia Peloritana dei Pericolanti, Classe di Scienze Fisiche, Matematiche e Naturali",

issn = "0365-0359",

number = "SUPPL. 1",

}

Gucciardi, PG, Valmalette, JC, Lopes, M, Dèturche, R, Lamy De La Chapelle, M, Barchiesi, D, Bonaccorso, F, D'Andrea, C, Chaigneau, M, Picardi, G & Ossikovski, R 2011, 'Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)', AAPP Atti della Accademia Peloritana dei Pericolanti, Classe di Scienze Fisiche, Matematiche e Naturali, vol. 89, no. SUPPL. 1. https://doi.org/10.1478/C1V89S1P042

Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001). / Gucciardi, P. G.; Valmalette, J. C.; Lopes, M. et al.
In: AAPP Atti della Accademia Peloritana dei Pericolanti, Classe di Scienze Fisiche, Matematiche e Naturali, Vol. 89, No. SUPPL. 1, 01.12.2011.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)

AU - Gucciardi, P. G.

AU - Valmalette, J. C.

AU - Lopes, M.

AU - Dèturche, R.

AU - Lamy De La Chapelle, M.

AU - Barchiesi, D.

AU - Bonaccorso, F.

AU - D'Andrea, C.

AU - Chaigneau, M.

AU - Picardi, G.

AU - Ossikovski, R.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We report on the effects of light depolarization induced by sharp metallic tips in Tip-Enhanced Raman Spectroscopy (TERS). Experiments on Si(001) and GaAs(001) crystals show that the excitation feld depolarization induces a selective enhancement of specifc Raman modes, depending on their Raman tensor symmetry. A complete polarization analysis of the light backscattered from the tip confrms the TERS fndings. The spatial confnement of the depolarization feld is studied and its dependence on the excitation wavelength and power are explored.

AB - We report on the effects of light depolarization induced by sharp metallic tips in Tip-Enhanced Raman Spectroscopy (TERS). Experiments on Si(001) and GaAs(001) crystals show that the excitation feld depolarization induces a selective enhancement of specifc Raman modes, depending on their Raman tensor symmetry. A complete polarization analysis of the light backscattered from the tip confrms the TERS fndings. The spatial confnement of the depolarization feld is studied and its dependence on the excitation wavelength and power are explored.

U2 - 10.1478/C1V89S1P042

DO - 10.1478/C1V89S1P042

M3 - Article

AN - SCOPUS:84859182751

SN - 0365-0359

VL - 89

JO - AAPP Atti della Accademia Peloritana dei Pericolanti, Classe di Scienze Fisiche, Matematiche e Naturali

JF - AAPP Atti della Accademia Peloritana dei Pericolanti, Classe di Scienze Fisiche, Matematiche e Naturali

IS - SUPPL. 1

ER -

Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)

Abstract

Access to Document

Fingerprint

Cite this