Linewidth narrowing of a DFB semiconductor laser at 1.55 μm by optical injection of an Er:ZBLAN microspherical laser

F. Lissillour; R. Gabet; P. Féron; P. Besnard; G. Stéphan

doi:10.1209/epl/i2001-00443-7

Linewidth narrowing of a DFB semiconductor laser at 1.55 μm by optical injection of an Er:ZBLAN microspherical laser

F. Lissillour
, R. Gabet
, P. Féron
, P. Besnard
, G. Stéphan

Institut FOTON-UMR6082

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

An Er:ZBLAN microspherical laser has several laser lines around 1.55 μm with narrow bandwidths (∼ 50-100 kHz). Such a laser is used as a master laser to optically inject a slave DFB semiconductor laser. We show that the slave can be easily locked by one microsphere mode only, enabling a spectral narrowing of the laser line (from 30 MHz to 67 kHz). We stress the selective process of light amplification and filtering effect by the DFB slave.

Original language	English
Pages (from-to)	499-504
Number of pages	6
Journal	Europhysics Letters
Volume	55
Issue number	4
DOIs	https://doi.org/10.1209/epl/i2001-00443-7
Publication status	Published - 11 Aug 2001
Externally published	Yes

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@article{38d0314b36934dcda6afc92218fa09ab,

title = "Linewidth narrowing of a DFB semiconductor laser at 1.55 μm by optical injection of an Er:ZBLAN microspherical laser",

abstract = "An Er:ZBLAN microspherical laser has several laser lines around 1.55 μm with narrow bandwidths (∼ 50-100 kHz). Such a laser is used as a master laser to optically inject a slave DFB semiconductor laser. We show that the slave can be easily locked by one microsphere mode only, enabling a spectral narrowing of the laser line (from 30 MHz to 67 kHz). We stress the selective process of light amplification and filtering effect by the DFB slave.",

author = "F. Lissillour and R. Gabet and P. F{\'e}ron and P. Besnard and G. St{\'e}phan",

year = "2001",

month = aug,

day = "11",

doi = "10.1209/epl/i2001-00443-7",

language = "English",

volume = "55",

pages = "499--504",

journal = "Europhysics Letters",

issn = "0295-5075",

number = "4",

}

TY - JOUR

T1 - Linewidth narrowing of a DFB semiconductor laser at 1.55 μm by optical injection of an Er:ZBLAN microspherical laser

AU - Lissillour, F.

AU - Gabet, R.

AU - Féron, P.

AU - Besnard, P.

AU - Stéphan, G.

PY - 2001/8/11

Y1 - 2001/8/11

N2 - An Er:ZBLAN microspherical laser has several laser lines around 1.55 μm with narrow bandwidths (∼ 50-100 kHz). Such a laser is used as a master laser to optically inject a slave DFB semiconductor laser. We show that the slave can be easily locked by one microsphere mode only, enabling a spectral narrowing of the laser line (from 30 MHz to 67 kHz). We stress the selective process of light amplification and filtering effect by the DFB slave.

AB - An Er:ZBLAN microspherical laser has several laser lines around 1.55 μm with narrow bandwidths (∼ 50-100 kHz). Such a laser is used as a master laser to optically inject a slave DFB semiconductor laser. We show that the slave can be easily locked by one microsphere mode only, enabling a spectral narrowing of the laser line (from 30 MHz to 67 kHz). We stress the selective process of light amplification and filtering effect by the DFB slave.

UR - https://www.scopus.com/pages/publications/0035797343

U2 - 10.1209/epl/i2001-00443-7

DO - 10.1209/epl/i2001-00443-7

M3 - Article

AN - SCOPUS:0035797343

SN - 0295-5075

VL - 55

SP - 499

EP - 504

JO - Europhysics Letters

JF - Europhysics Letters

IS - 4

ER -

Linewidth narrowing of a DFB semiconductor laser at 1.55 μm by optical injection of an Er:ZBLAN microspherical laser

Abstract

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