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Linewidth of an optically injected semiconductor laser

  • M. Bondiou
  • , R. Gabet
  • , G. M. Stéphan
  • , P. Besnard
  • Rennes et Université Laval (Canada)
  • Ecl. Natl. Sup. Sci. Appl. Technol.

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

This work addresses the linewidth properties of a distributed-feedback semiconductor laser submitted to optical injection. Experimentally, we first verify that under frequency-locking conditions, the slave laser has the same linewidth as the master. It can be smaller or larger than that of the free-slave laser. For lasers tuned on the same central frequency when the injected power decreases or when the master linewidth increases, we observe a partial linewidth transfer (progressive phase locking). These effects are well described theoretically by the Airy function generalized to the laser.

Original languageEnglish
Pages (from-to)41-46
Number of pages6
JournalJournal of Optics B: Quantum and Semiclassical Optics
Volume2
Issue number1
DOIs
Publication statusPublished - 1 Feb 2000
Externally publishedYes

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