Local and mean-field approaches for modeling semiconductor spin-lasers

Electrically and optically pumped spin-polarized vertical-cavity surface-emitting lasers (spin-VCSELs) seem to attain improved performance compared to their conventional counterparts. Their dynamical properties are studied mostly in the framework of effective rate equations containing parameters that are difficult to directly relate with fundamental material properties. Consequently, such approaches are not suitable for the precise design and optimization of future spin-lasers with desirable dynamical properties. We propose a method for extraction of dynamics-related parameters for the spin-flip model, which is widely used for the description of spin-laser dynamics. This method is based on the correspondence between robust local computational tools and effective models. A general matrix formalism based on S-matrices and generalized Maxwell-Bloch equations is used to determine approximate values of parameters such as cavity decay rate or birefringence rate. This would allow us to tune laser properties by changing the optical properties of the laser cavities and active media according to our needs. The method is demonstrated on realistic anisotropic spin-VCSEL structures containing a 12-quantum-well InGaAs/GaAsP active region. The potential limitations of already existing effective models are discussed.