Abstract
The positron annihilation method was used to investigate the DX(Si) and DX(Te) centers in n-type AlGaAs. A vacancy defect is observed in the ground state of the DX centers. The vacancy signal disappears in shallow donor state reached at low temperatures by illuminating the sample. The size of the vacancy is smaller compared with isolated As and Ga vacancies. Our results are in good agreement with the vacancy-interstitial model of the DX center.
| Original language | English |
|---|---|
| Pages (from-to) | 1073-1078 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 196-201 |
| Issue number | pt 2 |
| DOIs | |
| Publication status | Published - 1 Jan 1995 |
| Externally published | Yes |
| Event | Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Duration: 23 Jul 1995 → 28 Jul 1995 |
Fingerprint
Dive into the research topics of 'Local structure of the DX center in AlGaAs: results from positron spectroscopy'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver