TY - JOUR
T1 - Long-range contribution to the exchange-correlation kernel of time-dependent density functional theory
AU - Botti, Silvana
AU - Sottile, Francesco
AU - Vast, Nathalie
AU - Olevano, Valerio
AU - Reining, Lucia
AU - Weissker, Hans Christian
AU - Rubio, Angel
AU - Onida, Giovanni
AU - Del Sole, Rodolfo
AU - Godby, R. W.
PY - 2004/4/1
Y1 - 2004/4/1
N2 - We discuss the effects of a static long-range contribution - α/q 2 to the exchange-correlation kernel fxc(q) of time-dependent density functional theory. We show that the optical absorption spectrum of solids exhibiting a strong continuum excitonic effect is considerably improved with respect to calculations where the adiabatic local-density approximation is used. We discuss the limitations of this simple approach, and in particular that the same improvement cannot be found for the whole spectral range including the valence plasmons and bound excitons. On the other hand, we also show that within the range of validity of the method, the parameter a depends linearly on the inverse of the dielectric constant, and we demonstrate that this fact can be used to predict continuum excitonic effects in semiconductors. Results are shown for the real and imaginary part of the dielectric function of Si, GaAs, AlAs, diamond, MgO, SiC and Ge, and for the loss function of Si.
AB - We discuss the effects of a static long-range contribution - α/q 2 to the exchange-correlation kernel fxc(q) of time-dependent density functional theory. We show that the optical absorption spectrum of solids exhibiting a strong continuum excitonic effect is considerably improved with respect to calculations where the adiabatic local-density approximation is used. We discuss the limitations of this simple approach, and in particular that the same improvement cannot be found for the whole spectral range including the valence plasmons and bound excitons. On the other hand, we also show that within the range of validity of the method, the parameter a depends linearly on the inverse of the dielectric constant, and we demonstrate that this fact can be used to predict continuum excitonic effects in semiconductors. Results are shown for the real and imaginary part of the dielectric function of Si, GaAs, AlAs, diamond, MgO, SiC and Ge, and for the loss function of Si.
U2 - 10.1103/PhysRevB.69.155112
DO - 10.1103/PhysRevB.69.155112
M3 - Article
AN - SCOPUS:42749105701
SN - 1098-0121
VL - 69
SP - 155112-1-155112-14
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 15
M1 - 155112
ER -