Low Linewidth Enhancement Factor and High Optical Feedback Resistance of p-Doped Silicon Based Quantum Dot Lasers

J. Duan; H. Huang; D. Jung; J. Norman; J. E. Bowers; F. Grillot

doi:10.1109/IPCon.2018.8527184

Low Linewidth Enhancement Factor and High Optical Feedback Resistance of p-Doped Silicon Based Quantum Dot Lasers

J. Duan
, H. Huang
, D. Jung
, J. Norman
, J. E. Bowers
, F. Grillot

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This work shows that p-doped quantum dot lasers grown on silicon exhibit a low linewidth enhancement factor and hence a high resistance against optical feedback which are promising for isolator-free transmissions in photonic integrated circuits.

Original language	English
Title of host publication	31st Annual Conference of the IEEE Photonics Society, IPC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538653586
DOIs	https://doi.org/10.1109/IPCon.2018.8527184
Publication status	Published - 6 Nov 2018
Externally published	Yes
Event	31st Annual Conference of the IEEE Photonics Society, IPC 2018 - Reston, United States Duration: 30 Sept 2018 → 4 Oct 2018

Publication series

Name	31st Annual Conference of the IEEE Photonics Society, IPC 2018

Conference

Conference	31st Annual Conference of the IEEE Photonics Society, IPC 2018
Country/Territory	United States
City	Reston
Period	30/09/18 → 4/10/18

Access to Document

10.1109/IPCon.2018.8527184

Cite this

Duan, J., Huang, H., Jung, D., Norman, J., Bowers, J. E., & Grillot, F. (2018). Low Linewidth Enhancement Factor and High Optical Feedback Resistance of p-Doped Silicon Based Quantum Dot Lasers. In 31st Annual Conference of the IEEE Photonics Society, IPC 2018 Article 8527184 (31st Annual Conference of the IEEE Photonics Society, IPC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2018.8527184

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title = "Low Linewidth Enhancement Factor and High Optical Feedback Resistance of p-Doped Silicon Based Quantum Dot Lasers",

abstract = "This work shows that p-doped quantum dot lasers grown on silicon exhibit a low linewidth enhancement factor and hence a high resistance against optical feedback which are promising for isolator-free transmissions in photonic integrated circuits.",

author = "J. Duan and H. Huang and D. Jung and J. Norman and Bowers, \{J. E.\} and F. Grillot",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 31st Annual Conference of the IEEE Photonics Society, IPC 2018 ; Conference date: 30-09-2018 Through 04-10-2018",

year = "2018",

month = nov,

day = "6",

doi = "10.1109/IPCon.2018.8527184",

language = "English",

series = "31st Annual Conference of the IEEE Photonics Society, IPC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "31st Annual Conference of the IEEE Photonics Society, IPC 2018",

}

Duan, J, Huang, H, Jung, D, Norman, J, Bowers, JE & Grillot, F 2018, Low Linewidth Enhancement Factor and High Optical Feedback Resistance of p-Doped Silicon Based Quantum Dot Lasers. in 31st Annual Conference of the IEEE Photonics Society, IPC 2018., 8527184, 31st Annual Conference of the IEEE Photonics Society, IPC 2018, Institute of Electrical and Electronics Engineers Inc., 31st Annual Conference of the IEEE Photonics Society, IPC 2018, Reston, United States, 30/09/18. https://doi.org/10.1109/IPCon.2018.8527184

Low Linewidth Enhancement Factor and High Optical Feedback Resistance of p-Doped Silicon Based Quantum Dot Lasers. / Duan, J.; Huang, H.; Jung, D. et al.
31st Annual Conference of the IEEE Photonics Society, IPC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8527184 (31st Annual Conference of the IEEE Photonics Society, IPC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Duan, J.

AU - Huang, H.

AU - Jung, D.

AU - Norman, J.

AU - Bowers, J. E.

AU - Grillot, F.

PY - 2018/11/6

Y1 - 2018/11/6

N2 - This work shows that p-doped quantum dot lasers grown on silicon exhibit a low linewidth enhancement factor and hence a high resistance against optical feedback which are promising for isolator-free transmissions in photonic integrated circuits.

AB - This work shows that p-doped quantum dot lasers grown on silicon exhibit a low linewidth enhancement factor and hence a high resistance against optical feedback which are promising for isolator-free transmissions in photonic integrated circuits.

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U2 - 10.1109/IPCon.2018.8527184

DO - 10.1109/IPCon.2018.8527184

M3 - Conference contribution

AN - SCOPUS:85058350080

T3 - 31st Annual Conference of the IEEE Photonics Society, IPC 2018

BT - 31st Annual Conference of the IEEE Photonics Society, IPC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 31st Annual Conference of the IEEE Photonics Society, IPC 2018

Y2 - 30 September 2018 through 4 October 2018

ER -

Duan J, Huang H, Jung D, Norman J, Bowers JE, Grillot F. Low Linewidth Enhancement Factor and High Optical Feedback Resistance of p-Doped Silicon Based Quantum Dot Lasers. In 31st Annual Conference of the IEEE Photonics Society, IPC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8527184. (31st Annual Conference of the IEEE Photonics Society, IPC 2018). doi: 10.1109/IPCon.2018.8527184

Low Linewidth Enhancement Factor and High Optical Feedback Resistance of p-Doped Silicon Based Quantum Dot Lasers

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