TY - JOUR
T1 - Low-operating-voltage organic transistors made of bifunctional self-assembled monolayers
AU - Mottaghi, Mohammad
AU - Lang, Philippe
AU - Rodriguez, Fernand
AU - Rumyantseva, Anna
AU - Yassar, Abderrahim
AU - Horowitz, Gilles
AU - Lenfant, Stéphane
AU - Tondelier, Denis
AU - Vuillaume, Dominique
PY - 2007/3/5
Y1 - 2007/3/5
N2 - Self-assembled monolayers (SAMs) are molecular assemblies that spontaneously form on an appropriate substrate dipped into a solution of an active surfactant in an organic solvent. Organic field-effect transistors are described, built on an SAM made of bifunctional molecules comprising a short alkyl chain linked to an oligothiophene moiety that acts as the active semiconductor. The SAM is deposited on a thin oxide layer (alumina or silica) that serves as a gate insulator. Platinum - titanium source and drain electrodes (either top- or bottom-contact configuration) are patterned by using electron-beam (e-beam) lithography, with a channel length ranging between 20 and 1000 nm. In most cases, ill-defined current-voltage (I-V) curves are recorded, attributed to a poor electrical contact between platinum and the oligothiophene moiety. However, a few devices offer well-defined curves with a clear saturation, thus allowing an estimation of the mobility: 0.0035 cm2 V-1 s-1 for quaterthiophene and 8×10-4 cm2 V-1 s-1 for terthiophene. In the first case, the on-off ratio reaches 1800 at a gate voltage of -2 V. Interestingly, the device operates at room temperature and very low bias, which may open the way to applications where low consumption is required.
AB - Self-assembled monolayers (SAMs) are molecular assemblies that spontaneously form on an appropriate substrate dipped into a solution of an active surfactant in an organic solvent. Organic field-effect transistors are described, built on an SAM made of bifunctional molecules comprising a short alkyl chain linked to an oligothiophene moiety that acts as the active semiconductor. The SAM is deposited on a thin oxide layer (alumina or silica) that serves as a gate insulator. Platinum - titanium source and drain electrodes (either top- or bottom-contact configuration) are patterned by using electron-beam (e-beam) lithography, with a channel length ranging between 20 and 1000 nm. In most cases, ill-defined current-voltage (I-V) curves are recorded, attributed to a poor electrical contact between platinum and the oligothiophene moiety. However, a few devices offer well-defined curves with a clear saturation, thus allowing an estimation of the mobility: 0.0035 cm2 V-1 s-1 for quaterthiophene and 8×10-4 cm2 V-1 s-1 for terthiophene. In the first case, the on-off ratio reaches 1800 at a gate voltage of -2 V. Interestingly, the device operates at room temperature and very low bias, which may open the way to applications where low consumption is required.
U2 - 10.1002/adfm.200600179
DO - 10.1002/adfm.200600179
M3 - Article
AN - SCOPUS:33947191867
SN - 1616-301X
VL - 17
SP - 597
EP - 604
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 4
ER -