Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts

Pierre Jean Alet; Serge Palacin; Pere Roca i. Cabarrocas

doi:10.1016/j.tsf.2009.02.106

Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts

Pierre Jean Alet, Serge Palacin, Pere Roca i. Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

Nano-structured silicon thin films have been grown on tin-doped indium oxide (ITO) by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at temperatures lower than 200 °C. Nanometer-scaled aggregates of metal (copper or gold) obtained from evaporated layers were necessary to initiate the nano-structuring growth. Different deposition conditions have been investigated. The highest aspect ratio was obtained with copper and high-pressure plasmas with SiH₄ diluted in H₂. The metals help dissociating silane so the deposition starts faster on the aggregates than around them, which leads to nano-structuration. It is likely that the metal remains confined at the interface between ITO and silicon and do not diffuse in the silicon layer.

Original language	English
Pages (from-to)	6405-6408
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	23
DOIs	https://doi.org/10.1016/j.tsf.2009.02.106
Publication status	Published - 1 Oct 2009

Keywords

Catalysis
Copper
Gold
Nano-structure
Plasma-Enhanced Chemical Vapor Deposition
Silicon
Thin films

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10.1016/j.tsf.2009.02.106

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@article{ee30df5791954815a818093372c671f3,

title = "Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts",

abstract = "Nano-structured silicon thin films have been grown on tin-doped indium oxide (ITO) by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at temperatures lower than 200 °C. Nanometer-scaled aggregates of metal (copper or gold) obtained from evaporated layers were necessary to initiate the nano-structuring growth. Different deposition conditions have been investigated. The highest aspect ratio was obtained with copper and high-pressure plasmas with SiH4 diluted in H2. The metals help dissociating silane so the deposition starts faster on the aggregates than around them, which leads to nano-structuration. It is likely that the metal remains confined at the interface between ITO and silicon and do not diffuse in the silicon layer.",

keywords = "Catalysis, Copper, Gold, Nano-structure, Plasma-Enhanced Chemical Vapor Deposition, Silicon, Thin films",

author = "Alet, \{Pierre Jean\} and Serge Palacin and Cabarrocas, \{Pere Roca i.\}",

year = "2009",

month = oct,

day = "1",

doi = "10.1016/j.tsf.2009.02.106",

language = "English",

volume = "517",

pages = "6405--6408",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "23",

}

TY - JOUR

T1 - Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts

AU - Alet, Pierre Jean

AU - Palacin, Serge

AU - Cabarrocas, Pere Roca i.

PY - 2009/10/1

Y1 - 2009/10/1

N2 - Nano-structured silicon thin films have been grown on tin-doped indium oxide (ITO) by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at temperatures lower than 200 °C. Nanometer-scaled aggregates of metal (copper or gold) obtained from evaporated layers were necessary to initiate the nano-structuring growth. Different deposition conditions have been investigated. The highest aspect ratio was obtained with copper and high-pressure plasmas with SiH4 diluted in H2. The metals help dissociating silane so the deposition starts faster on the aggregates than around them, which leads to nano-structuration. It is likely that the metal remains confined at the interface between ITO and silicon and do not diffuse in the silicon layer.

AB - Nano-structured silicon thin films have been grown on tin-doped indium oxide (ITO) by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at temperatures lower than 200 °C. Nanometer-scaled aggregates of metal (copper or gold) obtained from evaporated layers were necessary to initiate the nano-structuring growth. Different deposition conditions have been investigated. The highest aspect ratio was obtained with copper and high-pressure plasmas with SiH4 diluted in H2. The metals help dissociating silane so the deposition starts faster on the aggregates than around them, which leads to nano-structuration. It is likely that the metal remains confined at the interface between ITO and silicon and do not diffuse in the silicon layer.

KW - Catalysis

KW - Copper

KW - Gold

KW - Nano-structure

KW - Plasma-Enhanced Chemical Vapor Deposition

KW - Silicon

KW - Thin films

U2 - 10.1016/j.tsf.2009.02.106

DO - 10.1016/j.tsf.2009.02.106

M3 - Article

AN - SCOPUS:68349119272

SN - 0040-6090

VL - 517

SP - 6405

EP - 6408

JO - Thin Solid Films

JF - Thin Solid Films

IS - 23

ER -

Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts

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Keywords

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