Low temperature plasma deposited microcrystalline silicon thin films. An emerging material for stable thin film transistors

P. Roca i Cabarrocas; S. Kasouit; B. Kalache; R. Vanderhaghen; Y. Bonnassieux; M. Elyaakoubi; I. French

doi:10.1117/12.476827

Low temperature plasma deposited microcrystalline silicon thin films. An emerging material for stable thin film transistors

P. Roca i Cabarrocas
, S. Kasouit
, B. Kalache
, R. Vanderhaghen
, Y. Bonnassieux
, M. Elyaakoubi
, I. French

Research output: Contribution to journal › Conference article › peer-review

Abstract

Top gate and bottom gate microcrystalline silicon thin film transistors (TFTs) have been produced by the radio frequency glow discharge technique using three preparation methods: the standard hydrogen dilution of silane in hydrogen, the use of the layer-by-layer technique, and the use of SiF ₄-Ar-H₂ feedstock. In all cases, stable top gate TFT with mobility values around 1 cm²/V.s have been achieved, making them suitable for circuit on glass applications. Moreover, the use of SiF ₄ gas combined with specific treatments of the a-SiN:H dielectric in bottom gate TFTs, fully compatible with today's a-Si:H process, lead to lateral growth of the silicon crystallites and an enhancement of the mobility to reache stable values of around 3 cm²/V.s.

Original language	English
Pages (from-to)	84-94
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5004
DOIs	https://doi.org/10.1117/12.476827
Publication status	Published - 15 Sept 2003
Event	Poly-Silicon Thin Film Transitor Technology and Applications in Displays and Other Novel Technology Areas - Santa Clara, CA, United States Duration: 21 Jan 2003 → 22 Jan 2003

Keywords

Bottom gate
Growth process
Microcrystalline silicon
Stability
Thin film transistors
Top gate

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10.1117/12.476827

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title = "Low temperature plasma deposited microcrystalline silicon thin films. An emerging material for stable thin film transistors",

abstract = "Top gate and bottom gate microcrystalline silicon thin film transistors (TFTs) have been produced by the radio frequency glow discharge technique using three preparation methods: the standard hydrogen dilution of silane in hydrogen, the use of the layer-by-layer technique, and the use of SiF 4-Ar-H2 feedstock. In all cases, stable top gate TFT with mobility values around 1 cm2/V.s have been achieved, making them suitable for circuit on glass applications. Moreover, the use of SiF 4 gas combined with specific treatments of the a-SiN:H dielectric in bottom gate TFTs, fully compatible with today's a-Si:H process, lead to lateral growth of the silicon crystallites and an enhancement of the mobility to reache stable values of around 3 cm2/V.s.",

keywords = "Bottom gate, Growth process, Microcrystalline silicon, Stability, Thin film transistors, Top gate",

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year = "2003",

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doi = "10.1117/12.476827",

language = "English",

volume = "5004",

pages = "84--94",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "Poly-Silicon Thin Film Transitor Technology and Applications in Displays and Other Novel Technology Areas ; Conference date: 21-01-2003 Through 22-01-2003",

}

Low temperature plasma deposited microcrystalline silicon thin films. An emerging material for stable thin film transistors. / Roca i Cabarrocas, P.; Kasouit, S.; Kalache, B. et al.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5004, 15.09.2003, p. 84-94.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Low temperature plasma deposited microcrystalline silicon thin films. An emerging material for stable thin film transistors

AU - Roca i Cabarrocas, P.

AU - Kasouit, S.

AU - Kalache, B.

AU - Vanderhaghen, R.

AU - Bonnassieux, Y.

AU - Elyaakoubi, M.

AU - French, I.

PY - 2003/9/15

Y1 - 2003/9/15

N2 - Top gate and bottom gate microcrystalline silicon thin film transistors (TFTs) have been produced by the radio frequency glow discharge technique using three preparation methods: the standard hydrogen dilution of silane in hydrogen, the use of the layer-by-layer technique, and the use of SiF 4-Ar-H2 feedstock. In all cases, stable top gate TFT with mobility values around 1 cm2/V.s have been achieved, making them suitable for circuit on glass applications. Moreover, the use of SiF 4 gas combined with specific treatments of the a-SiN:H dielectric in bottom gate TFTs, fully compatible with today's a-Si:H process, lead to lateral growth of the silicon crystallites and an enhancement of the mobility to reache stable values of around 3 cm2/V.s.

AB - Top gate and bottom gate microcrystalline silicon thin film transistors (TFTs) have been produced by the radio frequency glow discharge technique using three preparation methods: the standard hydrogen dilution of silane in hydrogen, the use of the layer-by-layer technique, and the use of SiF 4-Ar-H2 feedstock. In all cases, stable top gate TFT with mobility values around 1 cm2/V.s have been achieved, making them suitable for circuit on glass applications. Moreover, the use of SiF 4 gas combined with specific treatments of the a-SiN:H dielectric in bottom gate TFTs, fully compatible with today's a-Si:H process, lead to lateral growth of the silicon crystallites and an enhancement of the mobility to reache stable values of around 3 cm2/V.s.

KW - Bottom gate

KW - Growth process

KW - Microcrystalline silicon

KW - Stability

KW - Thin film transistors

KW - Top gate

U2 - 10.1117/12.476827

DO - 10.1117/12.476827

M3 - Conference article

AN - SCOPUS:0041882087

SN - 0277-786X

VL - 5004

SP - 84

EP - 94

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Poly-Silicon Thin Film Transitor Technology and Applications in Displays and Other Novel Technology Areas

Y2 - 21 January 2003 through 22 January 2003

ER -

Low temperature plasma deposited microcrystalline silicon thin films. An emerging material for stable thin film transistors

Abstract

Keywords

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