Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

D. Zhou; R. Piron; M. Dontabactouny; O. Dehaese; F. Grillot; T. Batte; K. Tavernier; J. Even; S. Loualiche

doi:10.1049/el:20093066

Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

D. Zhou
, R. Piron
, M. Dontabactouny
, O. Dehaese
, F. Grillot
, T. Batte
, K. Tavernier
, J. Even
, S. Loualiche

Research output: Contribution to journal › Article › peer-review

Abstract

Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225A/cm² (∼45A/cm² per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.

Original language	English
Pages (from-to)	50-51
Number of pages	2
Journal	Electronics Letters
Volume	45
Issue number	1
DOIs	https://doi.org/10.1049/el:20093066
Publication status	Published - 1 Jan 2009
Externally published	Yes

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@article{6da92c4bd1644ba9bbf4eda84fe8dfd9,

title = "Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy",

abstract = "Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225A/cm2 (∼45A/cm2 per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.",

author = "D. Zhou and R. Piron and M. Dontabactouny and O. Dehaese and F. Grillot and T. Batte and K. Tavernier and J. Even and S. Loualiche",

year = "2009",

month = jan,

day = "1",

doi = "10.1049/el:20093066",

language = "English",

volume = "45",

pages = "50--51",

journal = "Electronics Letters",

issn = "0013-5194",

number = "1",

}

TY - JOUR

T1 - Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

AU - Zhou, D.

AU - Piron, R.

AU - Dontabactouny, M.

AU - Dehaese, O.

AU - Grillot, F.

AU - Batte, T.

AU - Tavernier, K.

AU - Even, J.

AU - Loualiche, S.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225A/cm2 (∼45A/cm2 per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.

AB - Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225A/cm2 (∼45A/cm2 per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.

UR - https://www.scopus.com/pages/publications/58049128970

U2 - 10.1049/el:20093066

DO - 10.1049/el:20093066

M3 - Article

AN - SCOPUS:58049128970

SN - 0013-5194

VL - 45

SP - 50

EP - 51

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

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