Low threshold current density InAs quantum dash lasers on InP using double cap technique

D. Zhou; B. O. Fimland; R. Piron; O. Dehaese; F. Grillot; S. Loualiche

Low threshold current density InAs quantum dash lasers on InP using double cap technique

D. Zhou
, B. O. Fimland
, R. Piron
, O. Dehaese
, F. Grillot
, S. Loualiche

Norwegian University of Science and Technology
INSA Rennes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Low threshold current density InAs quantum dash lasers is demonstrated by reducing the energy inhomogeneous broadening through an optimized double cap technique. A threshold current density for infinite cavity length of 225 A/cm² (∼ 45 A/cm² per stack) is obtained from 5-stack laser structure. The characteristic temperature of 52 K is measured in the temperature range between 25 and 70 °C.

Original language	English
Title of host publication	2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
Publication status	Published - 1 Dec 2009
Externally published	Yes
Event	2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009 - Tampa, FL, United States Duration: 18 May 2009 → 21 May 2009

Publication series

Name	2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

Conference

Conference	2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
Country/Territory	United States
City	Tampa, FL
Period	18/05/09 → 21/05/09

Keywords

Molecular beam epitaxy
Quantum dash laser

Cite this

Zhou, D., Fimland, B. O., Piron, R., Dehaese, O., Grillot, F., & Loualiche, S. (2009). Low threshold current density InAs quantum dash lasers on InP using double cap technique. In 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009 (2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009).

@inproceedings{b52b971152474f169272200250c9cfdd,

title = "Low threshold current density InAs quantum dash lasers on InP using double cap technique",

abstract = "Low threshold current density InAs quantum dash lasers is demonstrated by reducing the energy inhomogeneous broadening through an optimized double cap technique. A threshold current density for infinite cavity length of 225 A/cm2 (∼ 45 A/cm2 per stack) is obtained from 5-stack laser structure. The characteristic temperature of 52 K is measured in the temperature range between 25 and 70 °C.",

keywords = "Molecular beam epitaxy, Quantum dash laser",

author = "D. Zhou and Fimland, \{B. O.\} and R. Piron and O. Dehaese and F. Grillot and S. Loualiche",

year = "2009",

month = dec,

day = "1",

language = "English",

isbn = "189358013X",

series = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009",

booktitle = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009",

note = "2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009 ; Conference date: 18-05-2009 Through 21-05-2009",

}

Zhou, D, Fimland, BO, Piron, R, Dehaese, O, Grillot, F & Loualiche, S 2009, Low threshold current density InAs quantum dash lasers on InP using double cap technique. in 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009. 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009, 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009, Tampa, FL, United States, 18/05/09.

Low threshold current density InAs quantum dash lasers on InP using double cap technique. / Zhou, D.; Fimland, B. O.; Piron, R. et al.
2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009. 2009. (2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low threshold current density InAs quantum dash lasers on InP using double cap technique

AU - Zhou, D.

AU - Fimland, B. O.

AU - Piron, R.

AU - Dehaese, O.

AU - Grillot, F.

AU - Loualiche, S.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Low threshold current density InAs quantum dash lasers is demonstrated by reducing the energy inhomogeneous broadening through an optimized double cap technique. A threshold current density for infinite cavity length of 225 A/cm2 (∼ 45 A/cm2 per stack) is obtained from 5-stack laser structure. The characteristic temperature of 52 K is measured in the temperature range between 25 and 70 °C.

AB - Low threshold current density InAs quantum dash lasers is demonstrated by reducing the energy inhomogeneous broadening through an optimized double cap technique. A threshold current density for infinite cavity length of 225 A/cm2 (∼ 45 A/cm2 per stack) is obtained from 5-stack laser structure. The characteristic temperature of 52 K is measured in the temperature range between 25 and 70 °C.

KW - Molecular beam epitaxy

KW - Quantum dash laser

M3 - Conference contribution

AN - SCOPUS:84887465631

SN - 189358013X

SN - 9781893580138

T3 - 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

BT - 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

T2 - 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

Y2 - 18 May 2009 through 21 May 2009

ER -

Low threshold current density InAs quantum dash lasers on InP using double cap technique

Abstract

Publication series

Conference

Keywords

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