Abstract
We investigate the electrical transport and magnetic field dependence of nano-patterned La0.7Sr0.3MnO3 devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ∼ 5 % in the smallest and thinnest device. Structures in a "V" pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations.
| Original language | English |
|---|---|
| Pages (from-to) | 4600-4603 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 520 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 1 May 2012 |
Keywords
- Domain walls
- Half metallic manganites
- Magneto-resistance
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