Magnetoresistance in Fe/ZnSe/Fe planar junctions

D. H. Mosca; J. M. George; J. L. Maurice; A. Fert; M. Eddrief; V. H. Etgens

doi:10.1016/S0304-8853(00)01062-3

Magnetoresistance in Fe/ZnSe/Fe planar junctions

D. H. Mosca, J. M. George, J. L. Maurice, A. Fert, M. Eddrief, V. H. Etgens

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the magnetoresistance measurements in Fe/ZnSe/Fe planar junctions. Fe/ZnSe/Fe structures were successfully grown by molecular beam epitaxy and subsequently patterned using optical lithography. At low temperature, the tunneling of electrons from one Fe layer to the other through ZnSe gives arise a small tunneling magnetoresistance (<0.1%) associated with the relative alignment of magnetic moments in the two Fe layers. Also, a large positive magnetoresistance (>100%) with an almost quadratic field dependence was observed for field as high as 80kOe.

Original language	English
Pages (from-to)	917-919
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	226-230
Issue number	PART I
DOIs	https://doi.org/10.1016/S0304-8853(00)01062-3
Publication status	Published - 1 Jan 2001
Externally published	Yes

Keywords

Heterostructures
Magnetoresistance
Semiconductors-ferromagnetic
Tunneling

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10.1016/S0304-8853(00)01062-3

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title = "Magnetoresistance in Fe/ZnSe/Fe planar junctions",

abstract = "We report on the magnetoresistance measurements in Fe/ZnSe/Fe planar junctions. Fe/ZnSe/Fe structures were successfully grown by molecular beam epitaxy and subsequently patterned using optical lithography. At low temperature, the tunneling of electrons from one Fe layer to the other through ZnSe gives arise a small tunneling magnetoresistance (<0.1\%) associated with the relative alignment of magnetic moments in the two Fe layers. Also, a large positive magnetoresistance (>100\%) with an almost quadratic field dependence was observed for field as high as 80kOe.",

keywords = "Heterostructures, Magnetoresistance, Semiconductors-ferromagnetic, Tunneling",

author = "Mosca, \{D. H.\} and George, \{J. M.\} and Maurice, \{J. L.\} and A. Fert and M. Eddrief and Etgens, \{V. H.\}",

year = "2001",

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doi = "10.1016/S0304-8853(00)01062-3",

language = "English",

volume = "226-230",

pages = "917--919",

journal = "Journal of Magnetism and Magnetic Materials",

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TY - JOUR

T1 - Magnetoresistance in Fe/ZnSe/Fe planar junctions

AU - Mosca, D. H.

AU - George, J. M.

AU - Maurice, J. L.

AU - Fert, A.

AU - Eddrief, M.

AU - Etgens, V. H.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - We report on the magnetoresistance measurements in Fe/ZnSe/Fe planar junctions. Fe/ZnSe/Fe structures were successfully grown by molecular beam epitaxy and subsequently patterned using optical lithography. At low temperature, the tunneling of electrons from one Fe layer to the other through ZnSe gives arise a small tunneling magnetoresistance (<0.1%) associated with the relative alignment of magnetic moments in the two Fe layers. Also, a large positive magnetoresistance (>100%) with an almost quadratic field dependence was observed for field as high as 80kOe.

AB - We report on the magnetoresistance measurements in Fe/ZnSe/Fe planar junctions. Fe/ZnSe/Fe structures were successfully grown by molecular beam epitaxy and subsequently patterned using optical lithography. At low temperature, the tunneling of electrons from one Fe layer to the other through ZnSe gives arise a small tunneling magnetoresistance (<0.1%) associated with the relative alignment of magnetic moments in the two Fe layers. Also, a large positive magnetoresistance (>100%) with an almost quadratic field dependence was observed for field as high as 80kOe.

KW - Heterostructures

KW - Magnetoresistance

KW - Semiconductors-ferromagnetic

KW - Tunneling

U2 - 10.1016/S0304-8853(00)01062-3

DO - 10.1016/S0304-8853(00)01062-3

M3 - Article

AN - SCOPUS:33748704724

SN - 0304-8853

VL - 226-230

SP - 917

EP - 919

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - PART I

ER -

Magnetoresistance in Fe/ZnSe/Fe planar junctions

Abstract

Keywords

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