Magnetoresistive tunnel junctions deposited on laterally modulated substrates

F. Montaigne; P. Gogol; J. Briatico; J. L. Maurice; F. Nguyen Van Dau; F. Petroff; A. Fert; A. Schuhl

doi:10.1063/1.126608

Magnetoresistive tunnel junctions deposited on laterally modulated substrates

F. Montaigne, P. Gogol, J. Briatico, J. L. Maurice, F. Nguyen Van Dau, F. Petroff, A. Fert, A. Schuhl

Research output: Contribution to journal › Article › peer-review

Abstract

Co/Al₂O₃/NiFe tunnel junctions were deposited on misoriented silicon substrates. A thermal treatment activates a step bunching mechanism on the silicon surface leading to a modulated topology with a nanometric lateral period. The bottom magnetic electrode and the barrier follow this topology. Such junctions present good magnetotransport characteristics with a magnetoresistance about 14% at room temperature. Due to the uniaxial anisotropy induced by the topological modulation, the antiparallel configuration of the magnetization is well defined leading to perfect square magnetoresistance cycles at all temperatures. The magnetic behavior of patterned junctions has been investigated by transport measurements and Kerr microscopy. More than inducing a strong uniaxial anisotropy, the modulated topology is shown to strongly influence the switching mechanism of the magnetization.

Original language	English
Pages (from-to)	3286-3288
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	22
DOIs	https://doi.org/10.1063/1.126608
Publication status	Published - 29 May 2000
Externally published	Yes

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title = "Magnetoresistive tunnel junctions deposited on laterally modulated substrates",

abstract = "Co/Al2O3/NiFe tunnel junctions were deposited on misoriented silicon substrates. A thermal treatment activates a step bunching mechanism on the silicon surface leading to a modulated topology with a nanometric lateral period. The bottom magnetic electrode and the barrier follow this topology. Such junctions present good magnetotransport characteristics with a magnetoresistance about 14\% at room temperature. Due to the uniaxial anisotropy induced by the topological modulation, the antiparallel configuration of the magnetization is well defined leading to perfect square magnetoresistance cycles at all temperatures. The magnetic behavior of patterned junctions has been investigated by transport measurements and Kerr microscopy. More than inducing a strong uniaxial anisotropy, the modulated topology is shown to strongly influence the switching mechanism of the magnetization.",

author = "F. Montaigne and P. Gogol and J. Briatico and Maurice, \{J. L.\} and \{Nguyen Van Dau\}, F. and F. Petroff and A. Fert and A. Schuhl",

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month = may,

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doi = "10.1063/1.126608",

language = "English",

volume = "76",

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journal = "Applied Physics Letters",

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T1 - Magnetoresistive tunnel junctions deposited on laterally modulated substrates

AU - Montaigne, F.

AU - Gogol, P.

AU - Briatico, J.

AU - Maurice, J. L.

AU - Nguyen Van Dau, F.

AU - Petroff, F.

AU - Fert, A.

AU - Schuhl, A.

PY - 2000/5/29

Y1 - 2000/5/29

N2 - Co/Al2O3/NiFe tunnel junctions were deposited on misoriented silicon substrates. A thermal treatment activates a step bunching mechanism on the silicon surface leading to a modulated topology with a nanometric lateral period. The bottom magnetic electrode and the barrier follow this topology. Such junctions present good magnetotransport characteristics with a magnetoresistance about 14% at room temperature. Due to the uniaxial anisotropy induced by the topological modulation, the antiparallel configuration of the magnetization is well defined leading to perfect square magnetoresistance cycles at all temperatures. The magnetic behavior of patterned junctions has been investigated by transport measurements and Kerr microscopy. More than inducing a strong uniaxial anisotropy, the modulated topology is shown to strongly influence the switching mechanism of the magnetization.

AB - Co/Al2O3/NiFe tunnel junctions were deposited on misoriented silicon substrates. A thermal treatment activates a step bunching mechanism on the silicon surface leading to a modulated topology with a nanometric lateral period. The bottom magnetic electrode and the barrier follow this topology. Such junctions present good magnetotransport characteristics with a magnetoresistance about 14% at room temperature. Due to the uniaxial anisotropy induced by the topological modulation, the antiparallel configuration of the magnetization is well defined leading to perfect square magnetoresistance cycles at all temperatures. The magnetic behavior of patterned junctions has been investigated by transport measurements and Kerr microscopy. More than inducing a strong uniaxial anisotropy, the modulated topology is shown to strongly influence the switching mechanism of the magnetization.

U2 - 10.1063/1.126608

DO - 10.1063/1.126608

M3 - Article

AN - SCOPUS:0001178349

SN - 0003-6951

VL - 76

SP - 3286

EP - 3288

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Magnetoresistive tunnel junctions deposited on laterally modulated substrates

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