Manipulating Dirac States in BaNiS2 by Surface Charge Doping

Jiuxiang Zhang; Thibault Daniel Pierre Sohier; Michele Casula; Zhesheng Chen; Jonathan Caillaux; Evangelos Papalazarou; Luca Perfetti; Luca Petaccia; Azzedine Bendounan; Amina Taleb-Ibrahimi; David Santos-Cottin; Yannick Klein; Andrea Gauzzi; Marino Marsi

doi:10.1021/acs.nanolett.2c04701

Manipulating Dirac States in BaNiS₂ by Surface Charge Doping

Jiuxiang Zhang
, Thibault Daniel Pierre Sohier
, Michele Casula
, Zhesheng Chen
, Jonathan Caillaux
, Evangelos Papalazarou
, Luca Perfetti
, Luca Petaccia
, Azzedine Bendounan
, Amina Taleb-Ibrahimi
, David Santos-Cottin
, Yannick Klein
, Andrea Gauzzi
, Marino Marsi

Research output: Contribution to journal › Article › peer-review

Abstract

In the Dirac semimetal BaNiS₂, the Dirac nodes are located along the Γ-M symmetry line of the Brillouin zone, instead of being pinned at fixed high-symmetry points. We take advantage of this peculiar feature to demonstrate the possibility of moving the Dirac bands along the Γ-M symmetry line in reciprocal space by varying the concentration of K atoms adsorbed onto the surface of cleaved BaNiS₂ single crystals. By means of first-principles calculations, we give a full account of this observation by considering the effect of the electrons donated by the K atom on the charge transfer gap, which establishes a promising tool for engineering Dirac states at surfaces, interfaces, and heterostructures.

Original language	English
Pages (from-to)	1830-1835
Number of pages	6
Journal	Nano Letters
Volume	23
Issue number	5
DOIs	https://doi.org/10.1021/acs.nanolett.2c04701
Publication status	Published - 8 Mar 2023
Externally published	Yes

Keywords

BaNiS
Dirac materials
charge transfer gap
surface electron doping
time-resolved ARPES

Access to Document

10.1021/acs.nanolett.2c04701

Cite this

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title = "Manipulating Dirac States in BaNiS2 by Surface Charge Doping",

abstract = "In the Dirac semimetal BaNiS2, the Dirac nodes are located along the Γ-M symmetry line of the Brillouin zone, instead of being pinned at fixed high-symmetry points. We take advantage of this peculiar feature to demonstrate the possibility of moving the Dirac bands along the Γ-M symmetry line in reciprocal space by varying the concentration of K atoms adsorbed onto the surface of cleaved BaNiS2 single crystals. By means of first-principles calculations, we give a full account of this observation by considering the effect of the electrons donated by the K atom on the charge transfer gap, which establishes a promising tool for engineering Dirac states at surfaces, interfaces, and heterostructures.",

keywords = "BaNiS, Dirac materials, charge transfer gap, surface electron doping, time-resolved ARPES",

author = "Jiuxiang Zhang and Sohier, \{Thibault Daniel Pierre\} and Michele Casula and Zhesheng Chen and Jonathan Caillaux and Evangelos Papalazarou and Luca Perfetti and Luca Petaccia and Azzedine Bendounan and Amina Taleb-Ibrahimi and David Santos-Cottin and Yannick Klein and Andrea Gauzzi and Marino Marsi",

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doi = "10.1021/acs.nanolett.2c04701",

language = "English",

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TY - JOUR

T1 - Manipulating Dirac States in BaNiS2 by Surface Charge Doping

AU - Zhang, Jiuxiang

AU - Sohier, Thibault Daniel Pierre

AU - Casula, Michele

AU - Chen, Zhesheng

AU - Caillaux, Jonathan

AU - Papalazarou, Evangelos

AU - Perfetti, Luca

AU - Petaccia, Luca

AU - Bendounan, Azzedine

AU - Taleb-Ibrahimi, Amina

AU - Santos-Cottin, David

AU - Klein, Yannick

AU - Gauzzi, Andrea

AU - Marsi, Marino

PY - 2023/3/8

Y1 - 2023/3/8

N2 - In the Dirac semimetal BaNiS2, the Dirac nodes are located along the Γ-M symmetry line of the Brillouin zone, instead of being pinned at fixed high-symmetry points. We take advantage of this peculiar feature to demonstrate the possibility of moving the Dirac bands along the Γ-M symmetry line in reciprocal space by varying the concentration of K atoms adsorbed onto the surface of cleaved BaNiS2 single crystals. By means of first-principles calculations, we give a full account of this observation by considering the effect of the electrons donated by the K atom on the charge transfer gap, which establishes a promising tool for engineering Dirac states at surfaces, interfaces, and heterostructures.

AB - In the Dirac semimetal BaNiS2, the Dirac nodes are located along the Γ-M symmetry line of the Brillouin zone, instead of being pinned at fixed high-symmetry points. We take advantage of this peculiar feature to demonstrate the possibility of moving the Dirac bands along the Γ-M symmetry line in reciprocal space by varying the concentration of K atoms adsorbed onto the surface of cleaved BaNiS2 single crystals. By means of first-principles calculations, we give a full account of this observation by considering the effect of the electrons donated by the K atom on the charge transfer gap, which establishes a promising tool for engineering Dirac states at surfaces, interfaces, and heterostructures.

KW - BaNiS

KW - Dirac materials

KW - charge transfer gap

KW - surface electron doping

KW - time-resolved ARPES

U2 - 10.1021/acs.nanolett.2c04701

DO - 10.1021/acs.nanolett.2c04701

M3 - Article

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AN - SCOPUS:85149940293

SN - 1530-6984

VL - 23

SP - 1830

EP - 1835

JO - Nano Letters

JF - Nano Letters

IS - 5