TY - JOUR
T1 - Mapping charge transfers between quantum levels using noncontact atomic force microscopy
AU - Borowik,
AU - Kusiaku, K.
AU - Deresmes, D.
AU - Théron, D.
AU - Diesinger, H.
AU - Mélin, T.
AU - Nguyen-Tran, T.
AU - Roca I Cabarrocas, P.
PY - 2010/8/6
Y1 - 2010/8/6
N2 - We demonstrate the possibility to map nanoscale charge transfers between quantum electronic levels at room temperature, using noncontact atomic force microscopy and Kelvin force microscopy in a regime of weak electromechanical coupling. A two-level system is studied, consisting of degenerately doped silicon nanocrystals on silicon substrates, with size in the 2-50 nm range, in which the energy spacing is tuned by the nanocrystal quantum confinement over a ≈1eV range. The nanocrystal ionization is found to follow an energy compensation mechanism driven by quantum confinement, in quantitative agreement with parametrized tight-binding calculations of its band structure.
AB - We demonstrate the possibility to map nanoscale charge transfers between quantum electronic levels at room temperature, using noncontact atomic force microscopy and Kelvin force microscopy in a regime of weak electromechanical coupling. A two-level system is studied, consisting of degenerately doped silicon nanocrystals on silicon substrates, with size in the 2-50 nm range, in which the energy spacing is tuned by the nanocrystal quantum confinement over a ≈1eV range. The nanocrystal ionization is found to follow an energy compensation mechanism driven by quantum confinement, in quantitative agreement with parametrized tight-binding calculations of its band structure.
U2 - 10.1103/PhysRevB.82.073302
DO - 10.1103/PhysRevB.82.073302
M3 - Article
AN - SCOPUS:77957596330
SN - 1098-0121
VL - 82
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 7
M1 - 073302
ER -