Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon

P. Roura; F. Taïr; J. Farjas; P. Roca I Cabarrocas

doi:10.1063/1.4803888

Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon

P. Roura
, F. Taïr
, J. Farjas
, P. Roca I Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

The specific heat, c_p, of two amorphous silicon (a-Si) samples has been measured by differential scanning calorimetry in the 100-900 K temperature range. When the hydrogen content is reduced by thermal annealing, c_p approaches the value of crystalline Si (c-Si). Within experimental accuracy, we conclude that c_p of relaxed pure a-Si coincides with that of c-Si. This result is used to determine the enthalpy, entropy, and Gibbs free energy of defect-free relaxed a-Si. Finally, the contribution of structural defects on these quantities is calculated and the melting point of several states of a-Si is predicted.

Original language	English
Article number	173515
Journal	Journal of Applied Physics
Volume	113
Issue number	17
DOIs	https://doi.org/10.1063/1.4803888
Publication status	Published - 7 May 2013

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10.1063/1.4803888

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title = "Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon",

abstract = "The specific heat, cp, of two amorphous silicon (a-Si) samples has been measured by differential scanning calorimetry in the 100-900 K temperature range. When the hydrogen content is reduced by thermal annealing, cp approaches the value of crystalline Si (c-Si). Within experimental accuracy, we conclude that cp of relaxed pure a-Si coincides with that of c-Si. This result is used to determine the enthalpy, entropy, and Gibbs free energy of defect-free relaxed a-Si. Finally, the contribution of structural defects on these quantities is calculated and the melting point of several states of a-Si is predicted.",

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T1 - Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon

AU - Roura, P.

AU - Taïr, F.

AU - Farjas, J.

AU - Roca I Cabarrocas, P.

PY - 2013/5/7

Y1 - 2013/5/7

N2 - The specific heat, cp, of two amorphous silicon (a-Si) samples has been measured by differential scanning calorimetry in the 100-900 K temperature range. When the hydrogen content is reduced by thermal annealing, cp approaches the value of crystalline Si (c-Si). Within experimental accuracy, we conclude that cp of relaxed pure a-Si coincides with that of c-Si. This result is used to determine the enthalpy, entropy, and Gibbs free energy of defect-free relaxed a-Si. Finally, the contribution of structural defects on these quantities is calculated and the melting point of several states of a-Si is predicted.

AB - The specific heat, cp, of two amorphous silicon (a-Si) samples has been measured by differential scanning calorimetry in the 100-900 K temperature range. When the hydrogen content is reduced by thermal annealing, cp approaches the value of crystalline Si (c-Si). Within experimental accuracy, we conclude that cp of relaxed pure a-Si coincides with that of c-Si. This result is used to determine the enthalpy, entropy, and Gibbs free energy of defect-free relaxed a-Si. Finally, the contribution of structural defects on these quantities is calculated and the melting point of several states of a-Si is predicted.

UR - https://www.scopus.com/pages/publications/84877734189

U2 - 10.1063/1.4803888

DO - 10.1063/1.4803888

M3 - Article

AN - SCOPUS:84877734189

SN - 0021-8979

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 17

M1 - 173515

ER -

Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon

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