TY - GEN
T1 - Mechanism of electron injection during the anodic oxidation of silicon
AU - Chazalviel, J. N.
AU - Ozanam, F.
PY - 1993/1/1
Y1 - 1993/1/1
N2 - n-Si photoanodes have been found to exhibit photocurrent multiplication during the first seconds of exposure to a fluoride-free, acidic electrolyte. This shows that, in contrast with earlier hypotheses, photocurrent doubling is not directly related to the presence of fluoride in the electrolyte, but rather must arise from an electron injection mechanism associated with the Si-H bonds initially present at the Si surface. It also suggests that the electroluminescence which has been observed during the anodic oxidation of porous silicon most probably stems from the same electron-injection mechanism.
AB - n-Si photoanodes have been found to exhibit photocurrent multiplication during the first seconds of exposure to a fluoride-free, acidic electrolyte. This shows that, in contrast with earlier hypotheses, photocurrent doubling is not directly related to the presence of fluoride in the electrolyte, but rather must arise from an electron injection mechanism associated with the Si-H bonds initially present at the Si surface. It also suggests that the electroluminescence which has been observed during the anodic oxidation of porous silicon most probably stems from the same electron-injection mechanism.
UR - https://www.scopus.com/pages/publications/0027149511
M3 - Conference contribution
AN - SCOPUS:0027149511
SN - 1558991786
T3 - Materials Research Society Symposium Proceedings
SP - 359
EP - 364
BT - Materials Research Society Symposium Proceedings
PB - Publ by Materials Research Society
T2 - Proceedings of the Second Symposium on Dynamics in Small Confining Systems
Y2 - 30 November 1992 through 4 December 1992
ER -