Abstract
This paper presents a new behavioral model of GaAs MESFETs when subjected to power pulses. This basic model appears to fit published experimental results satisfactorily and is shown to be precise enough for a first estimate of the power needed to disturb or destroy the considered components.
| Original language | English |
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| Pages | 170-173 |
| Number of pages | 4 |
| Publication status | Published - 1 Jan 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1997 4th European Conference on Radiation and Its Effects on Components and Systems, RADECS'97 - Cannes, Fr Duration: 15 Sept 1997 → 19 Sept 1997 |
Conference
| Conference | Proceedings of the 1997 4th European Conference on Radiation and Its Effects on Components and Systems, RADECS'97 |
|---|---|
| City | Cannes, Fr |
| Period | 15/09/97 → 19/09/97 |