Abstract
The microscopic characterization of ablation craters on gallium arsenide and silico produced by femtosecond laser pulses were discussed. Optical, atomic force and electron microscopy were used for microscopic analysis of craters. It was found that the boundary of the ablation crater for both gallium and silicon consists of a high and narrow rim. Whereas for GaAs the rim is very high and extremely narrow, for Si it was significantly lower and broader. It was also found that the ablation craters on both GaAs and Si were relatively flat.
| Original language | English |
|---|---|
| Pages (from-to) | 1032-1039 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4760 |
| Issue number | II |
| DOIs | |
| Publication status | Published - 1 Jan 2002 |
| Externally published | Yes |
| Event | High-Power Laser Ablation IV - Taos, United States Duration: 22 Apr 2002 → 26 Apr 2002 |
Keywords
- Laser ablation
- Laser surface modification
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