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Microscopic characterization of ablation craters produced by femtosecond laser pulses

  • V. V. Temnov
  • , K. Sokolowski-Tinten
  • , N. Stojanovic
  • , S. Kudryashov
  • , D. Von der Linde
  • , B. Kogan
  • , A. Schlarb
  • , B. Weyers
  • , R. Möller
  • , J. Seekamp
  • , C. Sotomayor-Torres
  • University of Duisburg-Essen
  • Bergische Universität Gesamthochschule Wuppertal

Research output: Contribution to journalConference articlepeer-review

Abstract

The microscopic characterization of ablation craters on gallium arsenide and silico produced by femtosecond laser pulses were discussed. Optical, atomic force and electron microscopy were used for microscopic analysis of craters. It was found that the boundary of the ablation crater for both gallium and silicon consists of a high and narrow rim. Whereas for GaAs the rim is very high and extremely narrow, for Si it was significantly lower and broader. It was also found that the ablation craters on both GaAs and Si were relatively flat.

Original languageEnglish
Pages (from-to)1032-1039
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4760
Issue numberII
DOIs
Publication statusPublished - 1 Jan 2002
Externally publishedYes
EventHigh-Power Laser Ablation IV - Taos, United States
Duration: 22 Apr 200226 Apr 2002

Keywords

  • Laser ablation
  • Laser surface modification

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