TY - JOUR
T1 - Microstructural and electrical investigation of Pd/Au ohmic contact on p-GaN
AU - Belahsene, Sofiane
AU - Patriarche, Gilles
AU - Troadec, David
AU - Sundaram, Suresh
AU - Ougazzaden, Abdallah
AU - Martinez, Anthony
AU - Ramdane, Abderrahim
N1 - Publisher Copyright:
© 2015 American Vacuum Society.
PY - 2015/1/1
Y1 - 2015/1/1
N2 - Interfacial microstructure, elemental diffusion, and electrical properties of Pd/Au ohmic contact to p-type GaN have been investigated using scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy. The as-deposited sample exhibits the formation of an ohmic contact which is fundamentally due to epitaxial relationship between the Pd, Au and GaN layer. Pd nanocrystals are formed with crystallographic orientation with respect to the substrate described as follows (111)Pd//(0001)GaN, [11¯0]Pd// [112¯0]GaN. Thermal annealing at 800 °C leads to the formation of majority phase composed by crystalline Au rich Au6-Pd2-Ga composites, with crystallographic orientation of (11¯0)Au6-Pd2-Ga//(0001)GaN, and minority phases, which are composed of Au5-Pd2-Ga2, Au3-Pd2-Ga3, and Ga2-Pd5, which is responsible for the formation of an ohmic contact with a specific contact resistance of 1.04 × 10-2 Ω cm2.
AB - Interfacial microstructure, elemental diffusion, and electrical properties of Pd/Au ohmic contact to p-type GaN have been investigated using scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy. The as-deposited sample exhibits the formation of an ohmic contact which is fundamentally due to epitaxial relationship between the Pd, Au and GaN layer. Pd nanocrystals are formed with crystallographic orientation with respect to the substrate described as follows (111)Pd//(0001)GaN, [11¯0]Pd// [112¯0]GaN. Thermal annealing at 800 °C leads to the formation of majority phase composed by crystalline Au rich Au6-Pd2-Ga composites, with crystallographic orientation of (11¯0)Au6-Pd2-Ga//(0001)GaN, and minority phases, which are composed of Au5-Pd2-Ga2, Au3-Pd2-Ga3, and Ga2-Pd5, which is responsible for the formation of an ohmic contact with a specific contact resistance of 1.04 × 10-2 Ω cm2.
UR - https://www.scopus.com/pages/publications/84923677551
U2 - 10.1116/1.4905793
DO - 10.1116/1.4905793
M3 - Article
AN - SCOPUS:84923677551
SN - 2166-2746
VL - 33
JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
IS - 1
M1 - 010603
ER -