Model calculation of phototransport properties of minority carriers of fully crystalline undoped μc-Si:H

Sanjay K. Ram; Satyendra Kumar; P. Roca i Cabarrocas

doi:10.1016/j.tsf.2009.02.110

Model calculation of phototransport properties of minority carriers of fully crystalline undoped μc-Si:H

Sanjay K. Ram, Satyendra Kumar, P. Roca i Cabarrocas

Research output: Contribution to journal › Article › peer-review

Abstract

The steady state photoconductivity (SSPC) as a function of temperature and light intensity was measured on microstructurally well-characterized plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon (μc-Si:H) films. Numerical modeling of SSPC was carried out using our proposed effective density of states profile. The simulation results of phototransport properties are found to be in good agreement with the experimental findings. The results and information gathered about the majority and minority carriers are compared to reported studies on microstructurally similar μc-Si:H material. We show that simulation of SSPC can yield reliable information about the phototransport properties of both majority and minority carriers.

Original language	English
Pages (from-to)	6248-6251
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	23
DOIs	https://doi.org/10.1016/j.tsf.2009.02.110
Publication status	Published - 1 Oct 2009

Keywords

Band structure
Electrical and electronic properties
Modeling and simulation
Photoconductivity
Silicon
Thin films

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10.1016/j.tsf.2009.02.110

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title = "Model calculation of phototransport properties of minority carriers of fully crystalline undoped μc-Si:H",

abstract = "The steady state photoconductivity (SSPC) as a function of temperature and light intensity was measured on microstructurally well-characterized plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon (μc-Si:H) films. Numerical modeling of SSPC was carried out using our proposed effective density of states profile. The simulation results of phototransport properties are found to be in good agreement with the experimental findings. The results and information gathered about the majority and minority carriers are compared to reported studies on microstructurally similar μc-Si:H material. We show that simulation of SSPC can yield reliable information about the phototransport properties of both majority and minority carriers.",

keywords = "Band structure, Electrical and electronic properties, Modeling and simulation, Photoconductivity, Silicon, Thin films",

author = "Ram, \{Sanjay K.\} and Satyendra Kumar and \{Roca i Cabarrocas\}, P.",

year = "2009",

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doi = "10.1016/j.tsf.2009.02.110",

language = "English",

volume = "517",

pages = "6248--6251",

journal = "Thin Solid Films",

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T1 - Model calculation of phototransport properties of minority carriers of fully crystalline undoped μc-Si:H

AU - Ram, Sanjay K.

AU - Kumar, Satyendra

AU - Roca i Cabarrocas, P.

PY - 2009/10/1

Y1 - 2009/10/1

N2 - The steady state photoconductivity (SSPC) as a function of temperature and light intensity was measured on microstructurally well-characterized plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon (μc-Si:H) films. Numerical modeling of SSPC was carried out using our proposed effective density of states profile. The simulation results of phototransport properties are found to be in good agreement with the experimental findings. The results and information gathered about the majority and minority carriers are compared to reported studies on microstructurally similar μc-Si:H material. We show that simulation of SSPC can yield reliable information about the phototransport properties of both majority and minority carriers.

AB - The steady state photoconductivity (SSPC) as a function of temperature and light intensity was measured on microstructurally well-characterized plasma deposited highly crystalline undoped hydrogenated microcrystalline silicon (μc-Si:H) films. Numerical modeling of SSPC was carried out using our proposed effective density of states profile. The simulation results of phototransport properties are found to be in good agreement with the experimental findings. The results and information gathered about the majority and minority carriers are compared to reported studies on microstructurally similar μc-Si:H material. We show that simulation of SSPC can yield reliable information about the phototransport properties of both majority and minority carriers.

KW - Band structure

KW - Electrical and electronic properties

KW - Modeling and simulation

KW - Photoconductivity

KW - Silicon

KW - Thin films

U2 - 10.1016/j.tsf.2009.02.110

DO - 10.1016/j.tsf.2009.02.110

M3 - Article

AN - SCOPUS:68349112732

SN - 0040-6090

VL - 517

SP - 6248

EP - 6251

JO - Thin Solid Films

JF - Thin Solid Films

IS - 23

ER -

Model calculation of phototransport properties of minority carriers of fully crystalline undoped μc-Si:H

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Keywords

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