Abstract
We present a model for the dielectric function of semiconductors. It has been tested successfully for Si, Ge, GaAs, and ZnSe. In conjunction with the single plasmon-pole approximation it yields plasmon-energy dispersions in fair agreement with experiments. It allows one, moreover, to deduce an analytical expression for the Coulomb-hole part of the static self-energy operator.
| Original language | English |
|---|---|
| Pages (from-to) | 9892-9895 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 47 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 1 Jan 1993 |
| Externally published | Yes |