Model verification for a high-power-efficiency AlGaAs-GaAs HBT

F. Deshours; E. Bergeault; G. Berghoff; C. Pinatel; C. Dubon-Chevallier

doi:10.1109/75.482062

Model verification for a high-power-efficiency AlGaAs-GaAs HBT

F. Deshours
, E. Bergeault
, G. Berghoff
, C. Pinatel
, C. Dubon-Chevallier

Telecom Paris
Orange Labs

Research output: Contribution to journal › Article › peer-review

Abstract

Heterojunction bipolar transistors (HBT's) with 2700 μm² of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and power-added efficiency under variable operating conditions. These measurements are performed with the aim of designing power amplifiers for mobile communications.

Original language	English
Pages (from-to)	31-33
Number of pages	3
Journal	IEEE Microwave and Guided Wave Letters
Volume	6
Issue number	1
DOIs	https://doi.org/10.1109/75.482062
Publication status	Published - 1 Jan 1996

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10.1109/75.482062

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title = "Model verification for a high-power-efficiency AlGaAs-GaAs HBT",

abstract = "Heterojunction bipolar transistors (HBT's) with 2700 μm2 of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and power-added efficiency under variable operating conditions. These measurements are performed with the aim of designing power amplifiers for mobile communications.",

author = "F. Deshours and E. Bergeault and G. Berghoff and C. Pinatel and C. Dubon-Chevallier",

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AU - Deshours, F.

AU - Bergeault, E.

AU - Berghoff, G.

AU - Pinatel, C.

AU - Dubon-Chevallier, C.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Heterojunction bipolar transistors (HBT's) with 2700 μm2 of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and power-added efficiency under variable operating conditions. These measurements are performed with the aim of designing power amplifiers for mobile communications.

AB - Heterojunction bipolar transistors (HBT's) with 2700 μm2 of emitter area are characterized for model verification using an active load-pull measurement system. The simulation and measurement results (up to 26 dBm) are reported and compared in terms of output power level and power-added efficiency under variable operating conditions. These measurements are performed with the aim of designing power amplifiers for mobile communications.

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JO - IEEE Microwave and Guided Wave Letters

JF - IEEE Microwave and Guided Wave Letters

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Model verification for a high-power-efficiency AlGaAs-GaAs HBT

Abstract

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