Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

Zacharie Jehl; Daniel Suchet; Anatole Julian; Cyril Bernard; Naoya Miyashita; Francois Gibelli; Yoshitaka Okada; Jean Francois Guillemolles

doi:10.1117/12.2250473

Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

Zacharie Jehl
, Daniel Suchet
, Anatole Julian
, Cyril Bernard
, Naoya Miyashita
, Francois Gibelli
, Yoshitaka Okada
, Jean Francois Guillemolles

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

Original language	English
Title of host publication	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017
Editors	Alexandre Freundlich, Masakazu Sugiyama, Laurent Lombez
Publisher	SPIE
ISBN (Electronic)	9781510606395
DOIs	https://doi.org/10.1117/12.2250473
Publication status	Published - 1 Jan 2017
Externally published	Yes
Event	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017 - San Francisco, United States Duration: 30 Jan 2017 → 1 Feb 2017

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10099
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017
Country/Territory	United States
City	San Francisco
Period	30/01/17 → 1/02/17

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10.1117/12.2250473

Cite this

Jehl, Z., Suchet, D., Julian, A., Bernard, C., Miyashita, N., Gibelli, F., Okada, Y., & Guillemolles, J. F. (2017). Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells. In A. Freundlich, M. Sugiyama, & L. Lombez (Eds.), Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017 Article 100990N (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10099). SPIE. https://doi.org/10.1117/12.2250473

Jehl, Zacharie ; Suchet, Daniel ; Julian, Anatole et al. / Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017. editor / Alexandre Freundlich ; Masakazu Sugiyama ; Laurent Lombez. SPIE, 2017. (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells",

abstract = "Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.",

author = "Zacharie Jehl and Daniel Suchet and Anatole Julian and Cyril Bernard and Naoya Miyashita and Francois Gibelli and Yoshitaka Okada and Guillemolles, \{Jean Francois\}",

note = "Publisher Copyright: {\textcopyright} 2017 SPIE.; Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017 ; Conference date: 30-01-2017 Through 01-02-2017",

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month = jan,

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doi = "10.1117/12.2250473",

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Jehl, Z, Suchet, D, Julian, A, Bernard, C, Miyashita, N, Gibelli, F, Okada, Y & Guillemolles, JF 2017, Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells. in A Freundlich, M Sugiyama & L Lombez (eds), Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017., 100990N, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10099, SPIE, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017, San Francisco, United States, 30/01/17. https://doi.org/10.1117/12.2250473

Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells. / Jehl, Zacharie; Suchet, Daniel; Julian, Anatole et al.
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017. ed. / Alexandre Freundlich; Masakazu Sugiyama; Laurent Lombez. SPIE, 2017. 100990N (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10099).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

AU - Jehl, Zacharie

AU - Suchet, Daniel

AU - Julian, Anatole

AU - Bernard, Cyril

AU - Miyashita, Naoya

AU - Gibelli, Francois

AU - Okada, Yoshitaka

AU - Guillemolles, Jean Francois

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

AB - Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

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DO - 10.1117/12.2250473

M3 - Conference contribution

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017

A2 - Freundlich, Alexandre

A2 - Sugiyama, Masakazu

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Y2 - 30 January 2017 through 1 February 2017

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Jehl Z, Suchet D, Julian A, Bernard C, Miyashita N, Gibelli F et al. Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells. In Freundlich A, Sugiyama M, Lombez L, editors, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI 2017. SPIE. 2017. 100990N. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2250473

Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

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