Modelling of the two-state lasing and the turn-on delay in 1.55μ m InAs/InP (113)B quantum dot lasers

K. Veselinov; F. Grillot; A. Bekiarski; S. Loualiche

doi:10.1049/ip-opt:20060043

Modelling of the two-state lasing and the turn-on delay in 1.55μ m InAs/InP (113)B quantum dot lasers

K. Veselinov
, F. Grillot
, A. Bekiarski
, S. Loualiche

Laboratoire d'Etude des Nanostructures À Semiconducteurs
INSA Rennes
Technical University Sofia

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Numerical models based on rate equations are used to study carrier dynamics in the two lowest energy levels of an InAs/InP (113)B quantum dot (QD) system. Two different theories are presented, one based on a cascade-relaxation model and the other using an additional efficient carrier relaxation. The comparison between these two theoretical approaches leads to a qualitative understanding of the origin of the two-state lasing in 1.55m InAs/InP (113)B (QD) lasers. In order to investigate the QD laser dynamics, numerical results for the turn-on delay of the double laser emission are also presented and discussed.

Original language	English
Pages (from-to)	308-311
Number of pages	4
Journal	IEE Proceedings: Optoelectronics
Volume	153
Issue number	6
DOIs	https://doi.org/10.1049/ip-opt:20060043
Publication status	Published - 29 Nov 2006
Externally published	Yes

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title = "Modelling of the two-state lasing and the turn-on delay in 1.55μ m InAs/InP (113)B quantum dot lasers",

abstract = "Numerical models based on rate equations are used to study carrier dynamics in the two lowest energy levels of an InAs/InP (113)B quantum dot (QD) system. Two different theories are presented, one based on a cascade-relaxation model and the other using an additional efficient carrier relaxation. The comparison between these two theoretical approaches leads to a qualitative understanding of the origin of the two-state lasing in 1.55m InAs/InP (113)B (QD) lasers. In order to investigate the QD laser dynamics, numerical results for the turn-on delay of the double laser emission are also presented and discussed.",

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AU - Veselinov, K.

AU - Grillot, F.

AU - Bekiarski, A.

AU - Loualiche, S.

PY - 2006/11/29

Y1 - 2006/11/29

N2 - Numerical models based on rate equations are used to study carrier dynamics in the two lowest energy levels of an InAs/InP (113)B quantum dot (QD) system. Two different theories are presented, one based on a cascade-relaxation model and the other using an additional efficient carrier relaxation. The comparison between these two theoretical approaches leads to a qualitative understanding of the origin of the two-state lasing in 1.55m InAs/InP (113)B (QD) lasers. In order to investigate the QD laser dynamics, numerical results for the turn-on delay of the double laser emission are also presented and discussed.

AB - Numerical models based on rate equations are used to study carrier dynamics in the two lowest energy levels of an InAs/InP (113)B quantum dot (QD) system. Two different theories are presented, one based on a cascade-relaxation model and the other using an additional efficient carrier relaxation. The comparison between these two theoretical approaches leads to a qualitative understanding of the origin of the two-state lasing in 1.55m InAs/InP (113)B (QD) lasers. In order to investigate the QD laser dynamics, numerical results for the turn-on delay of the double laser emission are also presented and discussed.

U2 - 10.1049/ip-opt:20060043

DO - 10.1049/ip-opt:20060043

M3 - Article

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SN - 1350-2433

VL - 153

SP - 308

EP - 311

JO - IEE Proceedings: Optoelectronics

JF - IEE Proceedings: Optoelectronics

IS - 6

ER -

Modelling of the two-state lasing and the turn-on delay in 1.55μ m InAs/InP (113)B quantum dot lasers

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