Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation

G. Niu; G. Saint-Girons; B. Vilquin; G. Delhaye; J. L. Maurice; C. Botella; Y. Robach; G. Hollinger

doi:10.1063/1.3193548

Molecular beam epitaxy of SrTiO₃ on Si (001): Early stages of the growth and strain relaxation

G. Niu, G. Saint-Girons, B. Vilquin, G. Delhaye, J. L. Maurice, C. Botella, Y. Robach, G. Hollinger

Research output: Contribution to journal › Article › peer-review

Abstract

The molecular beam epitaxy of SrTiO₃ (STO) layers on Si (001) is studied, focusing on the early stages of the growth and on the strain relaxation process. Evidence is given that even for optimized growth conditions, STO grows initially amorphous on silicon and recrystallizes, leading to the formation of an atomically abrupt heterointerface with silicon. Just after recrystallization, STO is partially strained. Further increase in its thickness leads to the onset of a progressive plastic relaxation mechanism. STO recovers its bulk lattice parameter for thicknesses of the order of 30 ML.

Original language	English
Article number	062902
Journal	Applied Physics Letters
Volume	95
Issue number	6
DOIs	https://doi.org/10.1063/1.3193548
Publication status	Published - 27 Aug 2009
Externally published	Yes

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title = "Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation",

abstract = "The molecular beam epitaxy of SrTiO3 (STO) layers on Si (001) is studied, focusing on the early stages of the growth and on the strain relaxation process. Evidence is given that even for optimized growth conditions, STO grows initially amorphous on silicon and recrystallizes, leading to the formation of an atomically abrupt heterointerface with silicon. Just after recrystallization, STO is partially strained. Further increase in its thickness leads to the onset of a progressive plastic relaxation mechanism. STO recovers its bulk lattice parameter for thicknesses of the order of 30 ML.",

author = "G. Niu and G. Saint-Girons and B. Vilquin and G. Delhaye and Maurice, \{J. L.\} and C. Botella and Y. Robach and G. Hollinger",

year = "2009",

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TY - JOUR

T1 - Molecular beam epitaxy of SrTiO3 on Si (001)

T2 - Early stages of the growth and strain relaxation

AU - Niu, G.

AU - Saint-Girons, G.

AU - Vilquin, B.

AU - Delhaye, G.

AU - Maurice, J. L.

AU - Botella, C.

AU - Robach, Y.

AU - Hollinger, G.

PY - 2009/8/27

Y1 - 2009/8/27

N2 - The molecular beam epitaxy of SrTiO3 (STO) layers on Si (001) is studied, focusing on the early stages of the growth and on the strain relaxation process. Evidence is given that even for optimized growth conditions, STO grows initially amorphous on silicon and recrystallizes, leading to the formation of an atomically abrupt heterointerface with silicon. Just after recrystallization, STO is partially strained. Further increase in its thickness leads to the onset of a progressive plastic relaxation mechanism. STO recovers its bulk lattice parameter for thicknesses of the order of 30 ML.

AB - The molecular beam epitaxy of SrTiO3 (STO) layers on Si (001) is studied, focusing on the early stages of the growth and on the strain relaxation process. Evidence is given that even for optimized growth conditions, STO grows initially amorphous on silicon and recrystallizes, leading to the formation of an atomically abrupt heterointerface with silicon. Just after recrystallization, STO is partially strained. Further increase in its thickness leads to the onset of a progressive plastic relaxation mechanism. STO recovers its bulk lattice parameter for thicknesses of the order of 30 ML.

U2 - 10.1063/1.3193548

DO - 10.1063/1.3193548

M3 - Article

AN - SCOPUS:69049109906

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062902

ER -

Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation

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Molecular beam epitaxy of SrTiO₃ on Si (001): Early stages of the growth and strain relaxation