Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films

M. Gensch; K. Roodenko; K. Hinrichs; R. Hunger; A. G. Güell; A. Merson; U. Schade; Y. Shapira; Th Dittrich; J. Rappich; N. Esser

doi:10.1116/1.1947801

Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films

M. Gensch
, K. Roodenko
, K. Hinrichs
, R. Hunger
, A. G. Güell
, A. Merson
, U. Schade
, Y. Shapira
, Th Dittrich
, J. Rappich
, N. Esser

Research output: Contribution to journal › Article › peer-review

Abstract

This paper aims to demonstrate the high capability of infrared spectroscopic ellipsometry (IRSE) for the characterization of very thin organic films and the organic to inorganic interfaces. It is shown that the detection limit of IRSE facilitates the investigation of ultrathin nitrobenzene (NB) films with monolayer sensitivity. This accounts for substrates from semiconductors to metals. The process of reoxidation of a NB terminated silicon (001) surface is also reflected in the infrared ellipsometric parameters and evidently proceeds despite the organic layer. As a complementary method, x-ray photoelectron spectroscopy (XPS) measurements were performed.

Original language	English
Pages (from-to)	1838-1842
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	4
DOIs	https://doi.org/10.1116/1.1947801
Publication status	Published - 1 Dec 2005
Externally published	Yes

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Gensch, M., Roodenko, K., Hinrichs, K., Hunger, R., Güell, A. G., Merson, A., Schade, U., Shapira, Y., Dittrich, T., Rappich, J., & Esser, N. (2005). Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23(4), 1838-1842. https://doi.org/10.1116/1.1947801

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title = "Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films",

abstract = "This paper aims to demonstrate the high capability of infrared spectroscopic ellipsometry (IRSE) for the characterization of very thin organic films and the organic to inorganic interfaces. It is shown that the detection limit of IRSE facilitates the investigation of ultrathin nitrobenzene (NB) films with monolayer sensitivity. This accounts for substrates from semiconductors to metals. The process of reoxidation of a NB terminated silicon (001) surface is also reflected in the infrared ellipsometric parameters and evidently proceeds despite the organic layer. As a complementary method, x-ray photoelectron spectroscopy (XPS) measurements were performed.",

author = "M. Gensch and K. Roodenko and K. Hinrichs and R. Hunger and G{\"u}ell, \{A. G.\} and A. Merson and U. Schade and Y. Shapira and Th Dittrich and J. Rappich and N. Esser",

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doi = "10.1116/1.1947801",

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Gensch, M, Roodenko, K, Hinrichs, K, Hunger, R, Güell, AG, Merson, A, Schade, U, Shapira, Y, Dittrich, T, Rappich, J & Esser, N 2005, 'Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 23, no. 4, pp. 1838-1842. https://doi.org/10.1116/1.1947801

TY - JOUR

T1 - Molecule-solid interfaces studied with infrared ellipsometry

T2 - Ultrathin nitrobenzene films

AU - Gensch, M.

AU - Roodenko, K.

AU - Hinrichs, K.

AU - Hunger, R.

AU - Güell, A. G.

AU - Merson, A.

AU - Schade, U.

AU - Shapira, Y.

AU - Dittrich, Th

AU - Rappich, J.

AU - Esser, N.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - This paper aims to demonstrate the high capability of infrared spectroscopic ellipsometry (IRSE) for the characterization of very thin organic films and the organic to inorganic interfaces. It is shown that the detection limit of IRSE facilitates the investigation of ultrathin nitrobenzene (NB) films with monolayer sensitivity. This accounts for substrates from semiconductors to metals. The process of reoxidation of a NB terminated silicon (001) surface is also reflected in the infrared ellipsometric parameters and evidently proceeds despite the organic layer. As a complementary method, x-ray photoelectron spectroscopy (XPS) measurements were performed.

AB - This paper aims to demonstrate the high capability of infrared spectroscopic ellipsometry (IRSE) for the characterization of very thin organic films and the organic to inorganic interfaces. It is shown that the detection limit of IRSE facilitates the investigation of ultrathin nitrobenzene (NB) films with monolayer sensitivity. This accounts for substrates from semiconductors to metals. The process of reoxidation of a NB terminated silicon (001) surface is also reflected in the infrared ellipsometric parameters and evidently proceeds despite the organic layer. As a complementary method, x-ray photoelectron spectroscopy (XPS) measurements were performed.

U2 - 10.1116/1.1947801

DO - 10.1116/1.1947801

M3 - Article

AN - SCOPUS:28444488485

SN - 1071-1023

VL - 23

SP - 1838

EP - 1842

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Molecule-solid interfaces studied with infrared ellipsometry: Ultrathin nitrobenzene films

Abstract

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