Monolithic optical frequency comb based on quantum dashed mode locked lasers for Tb/s data transmission

  • A. Martinez
  • , C. Calò
  • , V. Panapakkam
  • , K. Merghem
  • , R. T. Watts
  • , V. Vujicic
  • , C. Browning
  • , A. Accard
  • , F. Lelarge
  • , L. P. Barry
  • , A. Ramdane

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Optical frequency combs have great potential for ultra-high bit rate telecommunications e.g. optical orthogonal frequency-division multiplexing superchannels. For frequency comb generation, monolithic Quantum Dash semiconductor mode-locked lasers are very attractive candidates owing to their broadband optical spectrum, inherent intrinsic low noise and compactness. The active region is based on InAs nanostructures grown on InP for operation in the 1.55 μm window. Owing to enhanced nonlinear effects, a single gain section generates short pulses in the modelocking regime without resorting to an absorber section. An optical bandwidth over 1.3 THz yielding over 100 channels, 10 GHz spaced, is reported. Mode-locking properties are analyzed in the frequency domain using the concept of supermodes. An Allan deviation down to ∼ 10-9 is reported for these passively mode-locked lasers. The low timing jitter, longterm stability and high channel count of these QD based combs are of great potential for Tb/s data transmission with only one single FP type laser source.

Original languageEnglish
Title of host publicationQuantum Sensing and Nanophotonic Devices XII
EditorsManijeh Razeghi, Eric Tournie, Gail J. Brown
PublisherSPIE
ISBN (Electronic)9781628414608
DOIs
Publication statusPublished - 1 Jan 2015
Externally publishedYes
EventQuantum Sensing and Nanophotonic Devices XII - San Francisco, United States
Duration: 8 Feb 201512 Feb 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9370
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceQuantum Sensing and Nanophotonic Devices XII
Country/TerritoryUnited States
CitySan Francisco
Period8/02/1512/02/15

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