Morphology, composition and electrical properties of thin anodic oxides on InP

N. Simon, C. Decorse-Pascanut, L. Santinacci, A. M. Gonçalves, A. L. Joudrier, A. Etcheberry

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Depending on the applied electrochemical parameters, various anodic films can be grown onto InP in aqueous media. In borate buffer at pH = 9, the formation of homogeneous and thin InPO4-like films occurred when anodic treatment is performed with a low current density, while with higher imposed current configuration porous and thicker layers are grown. In this work, AFM measurements coupled with XPS analyses and capacitance-voltage investigations have been used to study the relationship between morphology, composition and electrical properties of different anodic oxide films performed on InP surface, with current densities ranging from 1 mA.cm-2 to 100 mA.cm-2.

Original languageEnglish
Title of host publicationECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3
PublisherElectrochemical Society Inc.
Pages273-281
Number of pages9
Edition3
ISBN (Electronic)9781607680611
ISBN (Print)9781566777117
DOIs
Publication statusPublished - 1 Jan 2009
Externally publishedYes
Event50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting - San Francisco, CA, United States
Duration: 24 May 200929 May 2009

Publication series

NameECS Transactions
Number3
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period24/05/0929/05/09

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