Mueller matrix ellipsometric study of multilayer spin-VCSEL structures with local optical anisotropy

Spin-laser structures such as spin-polarized vertical-cavity surface-emitting lasers are semiconductor devices in which the radiative recombination processes involving spin-polarized carriers result in an emission of circularly polarized photons. Nevertheless, additional linear in-plane anisotropies in the cavity, e.g., interfacial and surface anisotropies, generally lead to preferential linearly polarized laser emission and to possible coupling between modes. We present Mueller matrix ellipsometric study of non-intentionally doped InGaAs/GaAsP laser structures devoted for optical pumping operations in the spectral range from 0.73 to 6.4 eV in order to disentangle surface and quantum wells contributions to the linear optical birefringence of the structures. The measurement of full 4 × 4 Mueller matrix for multiple angles of incidence and in-plane azimuthal angles in combination with proper parametrization of optical functions has been used for extraction of optical permittivity tensor components along [110] and [110] crystal axis of surface strained layers and quantum wells grown on [001]-substrate. Such spectral dependence of optical tensor elements is crucial for modeling of spin-laser eigenmodes, resonance conditions, and also for understanding of sources of structure anisotropies.